In this paper, the internal structure of novel multiphase gallium nitride nanowires in which multiple zinc-blende and wurtzite crystalline domains grow simultaneously along the entire length of the nanowire is investigated. Orientation relationships within the multiphase nanowires are identified using high-resolution transmission electron microscopy of nanowire cross-sections fabricated with a ...

A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN struc...

We report resonant Raman scattering (RRS) by the TO, LO, and 2 LO modes of single wurtzite and zincblende GaAs nanowires. The optical band gap of wurtzite GaAs is 1.460 eV± 3meV at room temperature, and 35± 3meV larger than the GaAs zinc-blende band gap. Raman measurements using incoming light polarized parallel and perpendicular to the wire c axis allowed us to investigate the splitting of hea...

We have used micro-photoand cathodo-luminescence at low temperatures to study the effects of sulphur doping in InP and radial InP/InAs/InP structured nanowires. Samples with pure wurtzite crystal structure, with modulated wurtzite/zincblende crystal structure and with different radial InAs growth times were investigated. We observed a doping concentration gradient along the nanowires, the locat...

We present a first principles density functional theory based study of the impact of uniaxial strain on the structural and electronic properties of bulk ZnX X=O, S, Se, Te in the wurtzite and zinc blende phases. The strain axis was chosen to be along the 0001 and 111 directions, respectively, for the wurtzite and zinc blende systems. For large uniaxial compressive strains, all systems undergo a...

The semiconductor CdS is generally found in the wurtzite structure. Prior experimental and theoretical results confirm that the semiconductor CdS nanoparticles maintain a wurtzite structure for diameters greater than 6 nm. There is disagreement in the literature for sizes smaller than 6 nm. We use the density-functional theory FIREBALL code and perform finite-temperature molecular dynamics simu...

Infrared reflection and Raman spectroscopies have been employed to derive zone center and some zone boundary phonon energies in wurtzite and in zincblende GaN (Table 1.) [1-10]. Phonon and coupled modes have been employed to characterize stress conditions and carrier densities in thin films and device structures. Due to the wide bandgap non-resonant Raman scattering is easily performed using vi...

Using examples from SiGe solid solutions grown onto (001)Si substrates from metallic solutions (liquid phase epitaxy) we discuss the different mechanisms by which misfitting systems can relax the strain caused by pseudomorphic growth. We treat elastic, plastic and diffusive relaxation and their interdependence. As an extension we discuss additional relaxation mechanisms, though possibly not ver...

The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negligible intermixing of zinc blende stacking is reported. The suppression of the number of stacking faults was obtained by a procedure within the vapor-liquid-solid growth, which exploits the theoretical result that nanowires of small diameter ( approximately 10 nm) adopt purely wurtzite structure a...