نتایج جستجو برای: xsrxtio3

تعداد نتایج: 42  

2015
Wenzhi Li Zhuang Ma Lihong Gao Fuchi Wang

La₁-xSrxTiO3+δ (LST) has been studied in many fields, especially in the field of microelectronics due to its excellent electrical performance. Our previous theoretical simulated work has suggested that LST has good dielectric properties, but there are rare reports about this, especially experimental reports. In this paper, LST was prepared using a solid-state reaction method. The X-rays diffrac...

2004
M. W. Cole W. D. Nothwang C. Hubbard

Successful integration of paraelectric Ba1-xSrxTiO3 (BST) based thin films with affordable Si substrates has a potential significant commercial impact as the demand for high-frequency tunable devices intensifies. Utilizing a coplanar device design we have successfully designed, fabricated, characterized, and optimized a high performance Ta2O5 thin film passive buffer layer on Si substrates, whi...

A. Parviz H. Habibi Abyaneh K. Ozaee M. Enhessari,

Nowadays various methods are presented for synthesis of barium strontium titanate (BST) nanopowders with different morphology and properties. Each of these (BST)s has got individual characterization that makes it suitable for a special application. Every method has a special quality, causes it to have preference over the other methods. Low processing temperature is a desired point which most of...

A. Parviz H. Habibi Abyaneh K. Ozaee M. Enhessari,

Nowadays various methods are presented for synthesis of barium strontium titanate (BST) nanopowders with different morphology and properties. Each of these (BST)s has got individual characterization that makes it suitable for a special application. Every method has a special quality, causes it to have preference over the other methods. Low processing temperature is a desired point which most of...

2008
A. Liebsch

The insulator to metal transition in LaTiO3 induced by La substitution via Sr is studied within multiband exact diagonalization dynamical mean field theory at finite temperatures. It is shown that weak hole doping triggers a large interorbital charge transfer, with simultaneous electron and hole doping of t2g subbands. The transition is first order and exhibits phase separation between insulato...

2009
C. V. Weiss M. B. Okatan R. C. Toonen

Recently, there has been significant interest toward the development of tunable dielectric materials for voltage-controlled, frequency-agile phase shifters and filters operating in the microwave regime. The fundamental challenge in designing materials systems for such tunable devices is the simultaneous requirement of high dielectric tunability ([40%) over a large temperature interval (-10 C to...

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