The conversion efficiency of ultra-thin solar cells based on layered materials has been limited by their open-circuit voltage, which is typically pinned to a value under 0.6 V. Here we report an voltage 1.02 V in 120 nm-thick vertically stacked homojunction fabricated with substitutionally doped MoS2. This high consistent the band alignment MoS2 homojunction, more favourable than widely-used TM...

امروزه در مبحث محاسبات رآکتورهای هسته‌ای مثل فرسایش و مدیریت سوخت، تحلیل گذرا بازسازی توان میله‌های به دنبال روش‌هایی جهت استفاده کدهای هستند که علاوه بر دقت قابل‌قبول از هزینه زمان بهینه‌ای برخوردار باشند. این پژوهش با گسسته‌سازی معادله پخش نوترون روش نودال بسط شار جریان ‌متوسط مرتبه بالا نشان داده می‌شود روش‌ بهینه قابل‌قبولی بهره می‌برد. مستقیم الحاقی نوترون، برای هندسه مربعی دوبعدی دو گروه ...

The transition-metal dichalcogenide (TMDC) in the family of $\mathrm{MX}_2$ ($\mathrm{M}=\mathrm{Mo},\mathrm{W}$; $\mathrm{X}=\mathrm{S},\mathrm{Se}$) and graphene monolayer are atomically thin semiconductors semimetal, respectively. have been discovered as a new class for electronics optoelectronics applications. Because hexagonal lattice structure both materials, often combined with each othe...

The scalable and conformal synthesis of two-dimensional (2D) transition metal dichalcogenide (TMDC) heterostructures is a persisting challenge for their implementation in next-generation devices. In this work, we report the nanometer-thick 2D TMDC consisting TiSx-NbSx on both planar 3D structures using atomic layer deposition (ALD) at low temperatures (200–300 °C). To end, process was developed...

Besides the carbon-based materials, Janus structure, which combines features of multiple transition metal dichalcogenide (TMDC) monolayers into a single polar material, has increased interest researchers because its unique structure and advanced applications. Monolayer TMDC can sustain substantially greater strain than bulk making them ideal for flexible electrical optoelectronic devices. Furth...

Tailoring the surface properties of 2D materials, such as transition metal dichalcogenides (TMDCs), at nanoscale is becoming essential in fabrication various material-based nanoelectronic devices. Due to chemical inertness their basal plane, modification TMDCs limited defective sites, often requiring special treatments, conversion TMDC from its semiconducting into metallic phase. In this work, ...

Transition-metal dichalcogenide (TMDC) homo- and heterostacks hold tantalizing prospects for being integrated as active components in future van der Waals (vdW) electronics optoelectronics. How...