Titanium nitride (TiN) is one of the most well-established engineering materials nowadays. TiN can overcome most of the drawbacks of palsmonic metals due to its high electron conductivity and mobility, high melting point and due to the compatibility of its growth with Complementary Metal Oxide Semiconductor (CMOS) technology. In this work, we review the dielectric function spectra of TiN and we...

A kidney tubular basement membrane (TBM) component that is bound by antibodies from individuals with anti-TBM antibody-associated tubulointerstitial nephritis (TIN) was purified and characterized (TIN antigen). TIN antigen was prepared from rabbit TBM by extraction with guanidine and purified by ion-exchange, gel filtration, and reversed-phase chromatography. Based upon yields of protein and an...

TiN thin films were deposited on MgO (100) substrates at different substrate temperatures using rf sputtering with Ar/N2 ratio of about 10. At 700°C, the growth rate of TiN was approximately 0.05 μm/h. The structural and electrical properties of TiN thin films were characterized with x-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electro...

Title of Document: TIN WHISKER RISK ASSESSMENT STUDIES Tong Fang, Doctor of Philosophy, 2005 Directed By: Professor Michael G. Pecht Department of Mechanical Engineering As a result of the global transition to lead (Pb)-free electronics, pure tin and high tin lead-free alloys have been widely adopted by the electronics part manufacturers as the materials of terminal finishes. However, electrica...

Objectives: Searching for testicular intraepithelial neoplasia (TIN; carcinoma in situ) in the contralateral testis of patients with germ cell tumour (GCT) may early disclose contralateral GCT. A single biopsy of the testis is thought to accurately detect TIN. Reports on false-negative biopsies have challenged this view. We investigated whether systematic two-site biopsies are more sensitive th...

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type ti...

In this work, TiN/TiCN & PN/TiCN multilayer films were deposited by plasma- assisted chemical vapour deposition (PACVD). Plasma nitriding (PN) and TiN intermediate layer prior to coating leads to appropriate hardness gradient and it can greatly improve the mechanical properties of the coating. The composition, crystalline structure and phase of the films were investigated by X-ray d...

In order to clarify the controversies of hardening mechanism for TiN/SiNx-based nanocomposite films, the microstructure and hardness for TiN/SiNx and TiAlN/SiNx nanocomposite films with different Si content were studied. With the increase of Si content, the crystallization degree for two series of films firstly increases and then decreases. The microstructural observations suggest that when SiN...