Traditionally, strain effect was mainly considered in the materials with periodic lattice structure, and was thought to be very weak in amorphous semiconductors. Here, we investigate the effects of strain in films of cobalt-doped amorphous carbon (Co-C) grown on 0.7PbMg(1/3)Nb(2/3)O3-0.3PbTiO3 (PMN-PT) substrates. The electric transport properties of the Co-C films were effectively modulated by...

The rapid solidification of liquid silicon carbide (SiC) is studied by molecular dynamic simulation using the Tersoff potential. The structural properties of liquid and amorphous SiC are analyzed by the radial distribution function, angular distribution function, coordination number, and visualization technology. Results show that both heteronuclear and homonuclear bonds exist and no atomic seg...

Solid state X-ray detectors based on large-area amorphous semiconductors such as amorphous silicon or selenium have been developed. The requirements for various applications in medical diagnosis determine the boundary conditions for different detectors. Key parameters are image receptor size, spatial resolution, image frequency, signal-to-noise ratio, and long-term stability. Conventional thora...

Abstract: This paper discusses the photodiode capacitance dependence on imposed light and applied voltage using different devices. The first device is a double amorphous silicon pin-pin photodiode; the second one a crystalline pin diode and the last one a single pin amorphous silicon diode. Double amorphous silicon diodes can be used as (de)multiplexer devices for optical communications. For sh...

Electron tomography is a well-established technique for three-dimensional structure determination of (almost) amorphous specimens in life sciences applications. With the recent advances in nanotechnology and the semiconductor industry, there is also an increasing need for high-resolution three-dimensional (3D) structural information in physical sciences. In this article, we evaluate the capabil...