نتایج جستجو برای: asymmetry quantum dot

تعداد نتایج: 343251  

2007
D. Sztenkiel R. Świrkowicz

Electron transport across two capacitively coupled quantum dots in a parallel geometry is theoretically studied in the non-linear response regime with spin and orbital degrees of freedom taken into account and the Kondo effect induced by on-site and inter-dot Coulomb correlations is analyzed. For a system with each dot symmetrically coupled to a separate set of electrodes a well-defined spin an...

2001
Z. Y. Zeng Alejandro Pérez

We study the Aharonov-Bohm effect in a coupled 2×2 quantum dot array with two-terminals. A striking conductance dip arising from the Fano interference is found as the energy levels of the intermediate dots are mismatched, which is lifted in the presence of a magnetic flux. A novel five peak structure is observed in the conductance for large mismatch. The Aharonov-Bohm evolution of the linear co...

E. Karimzadeh Esfahani, M. Bagheri Harouni, R. Roknizadeh,

In this paper we consider electromagnetic field quantization in the presence of a dispersive and absorbing semiconductor quantum dot. By using macroscopic approach and Green's function method, quantization of electromagnetic field is investigated. Interaction of a two-level atom , which is doped in a semiconductor quantum dot, with the quantized field is considered and its spontaneous emission ...

Journal: :Nano Letters 2021

Holes in nanowires have drawn significant attention recent years because of the strong spin-orbit interaction, which plays an important role constructing Majorana zero modes and manipulating qubits. Here, from strongly anisotropic leakage current spin blockade regime for a double dot, we extract full g-tensor find that field is plane with azimuthal angle 59{\deg} to axis nanowire. The direction...

Journal: :international journal of nano dimension 0
h. rasooli s. department of electrical engineering, college of technical& engineering, tabriz branch , islamic azad university, tabriz , iran. s. zabihi department of electrical engineering, college of technical& engineering, tabriz branch , islamic azad university, tabriz , iran. s. k. seyyedi s. department of electrical engineering, college of technical& engineering, tabriz branch , islamic azad university, tabriz , iran.

the electronic conductance at zero temperature through a quantum wire with side-connected asymmetric quantum ring (as a scatter system) is theoretically studied using the non-interacting hamiltonian anderson tunneling method. in this paper we concentrate on the configuration of the quantum dot rings. we show that the asymmetric structure of qd-scatter system strongly influences the amplitude an...

Journal: :Physical review 2021

The fluctuations of the heat current in a quantum dot coupled to electron reservoirs are calculated at finite frequency, voltage, and temperature using nonequilibrium Green function technique. nonsymmetrized noise is expressed as an integral on energy containing four contributions, each which includes transmission amplitudes, electron-hole pair distribution functions, difference factors. effect...

Journal: :Physical review letters 2013
Mikkel Settnes Per Kaer Anders Moelbjerg Jesper Mork

We show that Auger processes involving wetting layer transitions mediate emission from a cavity that is detuned from a quantum dot by even tens of meV. The wetting layer thus acts as a reservoir, which by Coulomb scattering can supply or absorb the energy difference between emitter and cavity. We perform microscopic calculations of the effect treating the wetting layer as a non-Markovian reserv...

Quantum dot cellular automata (QCA) introduces a pioneer technology in nano scale computer architectures. Employing this technology is one of the solutions to decrease the size of circuits and reducing power dissipation. In this paper, two new optimized FlipFlops with reset input are proposed in quantum dot cellular automata technology. In addition, comparison with related works is performed.Th...

Mahmoud Samadpour, Mehdi Molaei

CdSe quantum dots were in situ deposited on various structures of TiO2 photoanode by successive ionic layer adsorption and reaction (SILAR). Various sensitized TiO2 structures were integrated as a photoanode in order to make quantum dot sensitized solar cells. High power conversion efficiency was obtained; 2.89 % (Voc=524 mV, Jsc=9.78 mA/cm2, FF=0.56) for the cells that sensitized by SILAR meth...

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