نتایج جستجو برای: avalanche photodiode
تعداد نتایج: 7665 فیلتر نتایج به سال:
The characterisation of photodiodes used as photosensors requires a determination of the number of electron–hole pairs produced by scintillation light. One method involves comparing signals produced by X-ray absorptions occurring directly in the avalanche photodiode with the light signals. When the light is derived from light-emitting diodes in the 400–600 nm range, significant non-linear behav...
Balanced photodetection is a commonly used detection method in the lab when an experiment requires increased signal-to-noise. This detection method has many advantages to simply amplifying a signal with an amplifier following the photodiode. In some cases, it can also achieve better noise performance and sensitivity than an avalanche photodiode (APD). It is particularly powerful in its ability ...
A Large Area Avalanche Photodiode was studied, aiming to access its performance as light detector at low temperatures, down to 80 C. The excess noise factor, F ; was measured and found to be approximately independent of the temperature. A linear dependence of F on the APD gain with a slope of 0.0023970.00008 was observed for gains >100. The detection of low intensity light pulses, producing onl...
This experiment investigates properties of light at the single photon level. We generate pairs of 915.8-nm photons through parametric downconversion by sending a beam of 457.9-nm light through a BBO crystal. These downconverted photons are detected using two avalanche photodiodes. We then create a distinguishable characteristic in one arm of a Mach-Zehnder interferometer by adding a half wavepl...
Avalanche photodiodes are commonly used as detectors for low energy x-rays. In this work, we report on a fitting technique used to account for different detector responses resulting from photoabsorption in the various avalanche photodiode layers. The use of this technique results in an improvement of the energy resolution at 8.2 keV by up to a factor of 2 and corrects the timing information by ...
We investigate the performance of separate absorption multiplication InGaAs/InP avalanche photodiodes as single-photon detectors for 1.3- and 1.55-mum wavelengths. First we study afterpulses and choose experimental conditions to limit this effect. Then we compare the InGaAs/InP detector with a germanium avalanche photodiode; the former shows a lower dark-count rate. The effect of operating temp...
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In this work we report a separate-absorption-charge-multiplication Ge/Si avalanche photodiode with an enhanced gain-bandwidth-product of 845 GHz at a wavelength of 1310 nm. The corresponding gain value is 65 and the electrical bandwidth is 13 GHz at an optical input power of -30 dBm. The unconventional high gain-bandwidth-product is investigated using device physical simulation and optical puls...
We report benchmark tests of a new single-photon counting detector based on a GaAsP photocathode and an electron-bombarded avalanche photodiode developed by Hamamatsu Photonics. We compare its performance with those of standard Geiger-mode avalanche photodiodes. We show its advantages for FCS due to the absence of after-pulsing and for fluorescence lifetime measurements due to its excellent tim...
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