SiO2/ZnS core/shell nanostructures have been synthesized at room temperature by a simple wet chemical method. The prepared materials are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), infrared spectroscopy (IR), UV–vis spectroscopic and transmission electron microscopy (TEM) studies. X-ray diffraction pattern exhibits peaks correspond to the cubic phase of ZnS. Th...

The structure and the electronic properties of single-walled zigzag BN and B3C2N3 nanotubes (n, 0; n=4–10) were investigated using first-principles calculations based on a density functional theory. A plane–wave basis set with periodic boundary conditions in conjunction with Vanderbilt ultrasoft pseudo-potential was employed. The energy gap of ZB3C<su...

Materials and structures that strongly discriminate electromagnetic radiation based on one, or more of its properties (e.g. polarization, frequency) play an enabling role for a wide range of physical phenomena. For example, polarizers can selectively transmit light based on its polarization [1] over a wide range of frequencies; photonic crystals [2] (PhCs) can reflect light of certain frequenci...

The analogy between electromagnetic wave propagation in multidimensionally periodic structures and electronwave propagation in real crystals has proven to be a fruitful one. Initial efforts were motivated by the prospect of a photonic band gap, a frequency band in three-dimensional dielectric structures in which electromagnetic waves are forbidden irrespective of the propagation direction in sp...

The structure and the electronic properties of single-walled zigzag BN and B3C2N3 nanotubes (n, 0; n=4–10) were investigated using first-principles calculations based on a density functional theory. A plane–wave basis set with periodic boundary conditions in conjunction with Vanderbilt ultrasoft pseudo-potential was employed. The energy gap of ZB3C<su...

In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, as well as in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination...

Recently, searching large-bulk band gap topological insulator (TI) is under intensive study. Through k·P theory and first-principles calculations analysis on antimonene, we find that α-phase antimonene can be tuned to a 2D TI under an in-plane anisotropic strain and the magnitude of direct bulk band gap (SOC gap) depends on the strength of spin-orbit coupling (SOC) which is strain-dependent. As...

Zinc sulfide (ZnS) films were deposited through a simple and low cost spray pyrolytic technique using mixed aqueous solutions of zinc nitrate and thiourea. The structural and optical properties of these films were investigated as a function of initial (Zn:S) molar ratio in the precursor solution, which varied between (1:1) and (1:3). X-ray diffraction (XRD) analysis revealed that wurtzite...