The introduction metallocenes, in particular ferrocene (Fe(η-C5H5)2), cobaltocene (Co(η-C5H5)2), and nickelocene (Ni(η-C5H5)2), together with the carborane source molecule closo-1,2-dicarbadodecaborane, during plasma enhanced chemical vapor deposition, will result in the transition metal doping of semiconducting boron carbides. Here we report using ferrocene to introduce Fe dopants, and a semic...

Sintering of cubic boron nitride (cBN) was carried out by subjecting fine powders of cBN to high pressures and temperatures (P = 50-60 kb, T = 1200-1500°C ) in the presence of boron carbide as the main binding material together with a small amount of aluminium nitride. The composites were characterized by X-ray diffraction, scanning electron microscopy, FTIR, Raman Spectroscopy and microhardnes...

Amorphous Si–(B–)C–N polymer-derived ceramics (PDCs) with a boron contentranging from 0 to 8.3 at.% were synthesized by thermolysis of the boron-modifiedpoly(methylvinylsilazane). Correlation of the boron content and the thermal stability ofthese materials in the course of annealing were investigated using high temperaturethermal gravimetric analysis (HT-TGA). Furthermore, t...

With the advancements and miniaturization in semiconductor technology, the circuits within integrated circuits have become increasingly sensitive to the effects of radiation, and therefore, are susceptible to improper functioning in high radiation fields. The researchers at Texas A&M University have been able to manipulate this disadvantage into an advantage for radiation detection applications...

Background: Electrical Discharge Machining (EDM) is a well-established non-conventional machining process for the machining of electrically conductive and difficult-to-machine materials. But its applications are limited because of the slow machining rate and poor surface finish. Powder mixed EDM (PMEDM) is unitary of the recent progresses in the EDM process in which powder particles mixed in th...

Gibbs free-energy calculations based on density functional theory have been used to determine the possible source of failure of boron carbide just above the Hugoniot elastic limit (HEL). A range of B4C polytypes is found to be stable at room pressure. The energetic barrier for shock amorphization of boron carbide is by far the lowest for the B12(CCC) polytype, requiring only 6 GPa approximately...

The dehydrogenation of semiconducting boron carbide (B(10)C(2)H(x)) films as well as the three closo-carborane isomers of dicarbadodecaborane (C(2)B(10)H(12)) and two isomers of the corresponding closo-phosphacarborane (PCB(10)H(11)) all appear to be very similar. Photoionization mass spectrometry studies at near-threshold gas phase photoionization indicate that the preferred pathway for dissoc...