An integrated and new interface circuit with temperature compensation has been developed to enhance the ISFET readout circuit stability. The bridge-type floating source circuit suitable for sensor array processing has been proposed to maintain reliable constant drain–source voltage and constant drain current (CVCC) conditions for measuring the threshold voltage variation of ISFET due to the cor...

This article presents a current-mode quadrature oscillator. The proposed oscillator can provide 2 sinusoidal output currents with 90 0 phase difference. It also provides high output impedances that make the circuit able to directly drive load without additional current buffer. The condition of oscillation and frequency of oscillation can be controlled independently and electronically by adjusti...

ZnO activation of metallic Al for generating electricity for bioelectronic applications. Selective electrocatalysis in phosphate rich electrolyte. A cell operating in physiological saline buffer produces an open-circuit

This paper presents comparative analysis of various current differencing buffer amplifiers as an active building block in realization of analog signal processing circuit. The versatility of multi terminal active element (CDBA) as current mode and voltage mode circuit implementation using various methodologies has been reviewed. Also a comparative analysis based on characteristic parameters of v...

VDII ~ I A new CMOS buffer is introduced. A compensation circuit is used to cancel the output voltage offset resulting from the body effect. The voltage offset cancellation is achieved over all the input range hence resulting in a highly linear voltage transfer gain, which is independent of process variation. Class AB output stage is used in order to minimize the power consumption and increase ...

BACKGROUND Artificial boundaries on a map occur when the map extent does not cover the entire area of study; edges on the map do not exist on the ground. These artificial boundaries might bias the results of animal dispersal models by creating artificial barriers to movement for model organisms where there are no barriers for real organisms. Here, we characterize the effects of artificial bound...

Electrostatic Discharge (ESD) is generally recognized as an increasingly important issue for modern integrated circuits. Thinner gate oxides, complex chips with multiple power supplies and/or mixed-signal blocks, larger chip capacitance and faster circuit operation all contribute to increased ESD-sensitivity of advanced semiconductor products [1]. Detailed understanding of complex circuit-devic...

This paper presents a new CMOS buffer circuit topology for radiofrequency (RF) applications based on a fully-differential voltage-combiner circuit, capable of operating at low-voltage. The proposed circuit uses a combination of common-source (CS) and common-drain (CD) devices. The simulation results show good levels of linearity and bandwidth. To improve total harmonic distortion (THD) a source...

In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In2S3, WS2 and IGZO have been investigated by cell capacitance simulator (SCAPS) in this work. By varying absorber layer thickness, photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density efficiency) are determined. The highest efficiency achieved is 19.6% with layer. impact of temperat...

The non-toxic and wide bandgap material TiO2 is explored as an n-type buffer layer on p-type Cu(In,Ga)Se2 (CIGS) absorber layer for thin film solar cells. The amorphous TiO2 thin film deposited by atomic layer deposition process at low temperatures shows conformal coverage on the CIGS absorber layer. Solar cells from non-vacuum deposited CIGS absorbers with TiO2 buffer layer result in a high sh...