نتایج جستجو برای: carbide

تعداد نتایج: 9365  

2005
L. N. Satapathy P. D. Ramesh Dinesh Agrawal Rustum Roy

Fine, monophasic silicon carbide powder has been synthesized by direct solid-state reaction of its constituents namely silicon and carbon in a 2.45 GHz microwave field. Optimum parameters for the silicon carbide phase formation have been determined by varying reaction time and reaction temperature. The powders have been characterized for their particle size, surface area, phase composition (X-r...

Journal: :Journal of physics. Condensed matter : an Institute of Physics journal 2015
J E Proctor V Bhakhri R Hao T J Prior T Scheler E Gregoryanz M Chhowalla F Giulani

Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in ...

2017
S. Lay F. Osterstock J. Vicens

Carbide tungsten cobalt alloys were deformed in compression or in three point bending in a temperature range 1000-1350°C and in a stress domain 30-1000MPa. In these conditions, the stress exponent n of WC-CO alloys is a function of only the cobalt volurnic ratio and tends tow rds n = 1 for pure B carbide. The apparent activation energy is 550 kj mole. T.E.M. investigations on pure carbide defor...

Journal: :Physical review. B, Condensed matter 1993
Yoshida Onodera Ueno Takemura Shimomura

The pressure-induced phase transition in silicon carbide is studied using a constant-pressure ab initio technique. The reversible transition between the zinc-blende structure and the rock-salt structure is successfully reproduced through the simulation. The transformation mechanism at the atomistic level is characterized, and it is found that the transition is based on a tetragonal and an ortho...

2015
Sharaf

Introduction: The development of a self-limiting caries removal technique would be of great clinical importance. Smart bur II is a relatively new bur in the dental market and its manufacturer is claiming that it is the ultimate bur for selective caries removal. Objectives: The aim of this study was to evaluate caries removal time and efficacy of Smart bur II in comparison with conventional carb...

Journal: :Proceedings of the National Academy of Sciences of the United States of America 2016
Kelvin Y Xie Qi An Takanori Sato Andrew J Breen Simon P Ringer William A Goddard Julie M Cairney Kevin J Hemker

Findings of laser-assisted atom probe tomography experiments on boron carbide elucidate an approach for characterizing the atomic structure and interatomic bonding of molecules associated with extraordinary structural stability. The discovery of crystallographic planes in these boron carbide datasets substantiates that crystallinity is maintained to the point of field evaporation, and character...

2007
Y. Chen I. Zarudi

This paper investigates the mechanisms of material removal in dynamic friction polishing of polycrystalline diamond composites through the analysis of polishing-produced debris. The specimens used were PCD compacts composed of diamond and silicon carbide. In order to uncover the debris’ structure, high-resolution transmission electron microscopy (HRTEM), electron diffraction and electron energy...

Journal: :Journal of physics. Condensed matter : an Institute of Physics journal 2012
DeCarlos E Taylor James W McCauley T W Wright

The effects of stoichiometry on the atomic structure and the related mechanical properties of boron carbide (B(4)C) have been studied using density functional theory and quantum molecular dynamics simulations. Computational cells of boron carbide containing up to 960 atoms and spanning compositions ranging from 6.7% to 26.7% carbon were used to determine the effects of stoichiometry on the ato...

2017
Lucy Martin Hua-Khee Chan Ming-Hung Weng Alton Horsfall

The mobility of carriers in the channel of silicon carbide is significantly lower than in equivalent silicon devices. This results in a significant increase in on-state resistance in comparison to theoretical predictions and is hindering the uptake of silicon carbide technology in commercial circuits. The density of interface traps at the interface be‐ tween silicon carbide and the dielectric f...

Journal: :The international journal of esthetic dentistry 2014
Federico Ferraris Alessandro Conti

UNLABELLED The aim of this study is to investigate different instruments for finishing composite restorations, as well as examining different surfaces and interfaces of the same restoration. The null hypothesis is represented by the fact that there are no significant differences on roughness of composite restorations finishing between tungsten carbide and diamond burs, furthermore the null hypo...

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