a new output structure for class e power amplifier (pa) is proposed in this paper. a series lc resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. this resonator causes low impedance at the second harmonic. the output circuit is designed to shape the switch voltage of the class e amplifier and lower the voltage stress of the transistor. t...

The problem of copper diffusion in semiconductor devices has been known for several decades as used an interconnecting (bonding) metal and intensively studied due to its high coefficient. influence the intensive copper, depending on technology deposition regimes, investigated thin-film solar cells based zinc, titanium oxides obtained by DC-reactive magnetron sputtering. observed effect signific...

A  commercial  Ti-Nanoxide  was  deposited  on  In-doped  SnO2 (ITO) polymer  substrates by  tape casting  technique with different thicknesses  (7,  14  and  36μm)  to  be  used  as  photoelectrode  in flexible  dye-sensitized  solar  cells  (DSSCs).  Ruthenium  dye  was adsorbed on each TiO2 film for 24 h. The resulting photoelectrodes were used to form flexible DSSCs in combination with...

The photocathodic H2-evolution performance of Ni–Mo-coated radial n p junction Si microwire (Si MW) arrays has been evaluated on the basis of thermodynamic energy-conversion efficiency as well as solar cell figures of merit. The Ni–Mo-coated np-Si MW electrodes yielded open-circuit photovoltages (Voc) of 0.46 V, short-circuit photocurrent densities (Jsc) of 9.1 mA cm , and thermodynamically bas...

We present a route to successfully tackle the two main limitations, low open circuit voltage (Voc) and limited short circuit-density (Jsc), of polymer solar cells (PSCs) based on poly(3-hexylthiophene) (P3HT) as an electron-donor. The indene-C60 bisadduct (ICBA) was selected as an electron acceptor to improve the open circuit voltage (Voc). The narrow band gap polymer poly[(4,8-bis-(2-ethylhexy...

Aluminum oxide (AlOx) and plasma immersion ion implantation (PIII) were studied in relation to passivated silicon heterojunction solar cells. When aluminum oxide (AlOx) was deposited on the surface of a wafer; the electric field near the surface of wafer was enhanced; and the mobility of the carrier was improved; thus reducing carrier traps associated with dangling bonds. Using PIII enabled imp...

In this study, a novel photovoltaic cell based on the Ti3C2Tx MXene/n-type silicon (n-Si) Schottky junction is developed by simple solution-processed method of drop-casting MXene ethanol suspension onto surface n-Si wafers and subsequent natural drying in air. The demonstration device with configuration Ag (top electrode)/Ti3C2Tx/n-Si/In:Ga (back electrode) delivers power conversion efficiency ...

CsPbI2Br perovskite solar cells have achieved rapid development owing to their exceptional optoelectronic properties and relatively outstanding stability. However, open-circuit voltage (Voc) loss caused by band mismatch charge recombination between transporting layer is one of the crucial obstacles further improve device performance. Here, we proposed a bilayer electron transport ZnO(bottom)/Sn...

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using...