نتایج جستجو برای: conduction band nonparabolicity
تعداد نتایج: 169137 فیلتر نتایج به سال:
Two aspects related to valence-band hole spin are considered: spin surfaces in p-type semiconductors and flipping of the hole spin by an ultrashort electric field pulse. It is shown that heavy, light, and split-off holes have different spin surfaces. In general, the shape of the surface in real semiconductors may depend on the hole wave vector direction and magnitude. The concept of spin surfac...
We present a novel model to describe conduction band of GaNxAs1−x (GaNAs). As well known, GaNAs shows exotic behavior such as large band gap bowing. Although there are various models to describe the conduction band of GaNAs, origin of the band gap bowing is still under debate. On the basis of perturbation theory, we show that the behavior of conduction band is mainly arising from intervalley mi...
In this paper we present a physical discussion of the indirect two-photon absorption (TPA) occuring in silicon carbide with either cubic or wurtzite structure. Phonon-electron interaction is analyzed by finding the phonon features involved in the process as depending upon the crystal symmetry. Consistent physical assumptions about the phonon-electron scattering mechanisms are proposed in order ...
Intersubband polarization couples to collective excitations of the interacting electron gas confined in a semiconductor quantum well (QW) structure. Such excitations include correlated pair excitations (repellons) and intersubband plasmons (ISPs). The oscillator strength of intersubband resonances (ISBRs) strongly varies with QW parameters and electron density because of this coupling. Using th...
The purpose of this work is to incorporate numerically, in a discontinuous Galerkin (DG) solver of a Boltzmann-Poisson model for hot electron transport, an electronic conduction band whose values are obtained by the spherical averaging of the full band structure given by a local empirical pseudopotential method (EPM) around a local minimum of the conduction band for silicon, as a midpoint betwe...
An improved multivalley hydrodynamic model (HDM) including realistic band structure effects and impact ionization is developed. Unlike the recently-proposed HDM by Thoma et al [1] for nonparabolic band structures, our model minimizes the number of relaxation times and includes impact ionization. Furthermore, the intervalley transitions of hot carriers are considered. Also, the momentum relaxati...
Silver antimonate, AgSbO3, in both its defective pyrochlore and ilmenite structural polymorphs, has been suggested as a possible candidate mixed metal oxide for use in the photocatalytic splitting of water in visible light. In this study, we report electronic-structure calculations, using both standard and hybrid density-functional-theory approaches, on both structural forms of AgSbO3 to fully ...
In this work, the formation of oxygen-vacancy defect in 3d metals-doped TiO2 anatase and rutile structures is first investigated. The systematic calculations of formation energy, crystalline stability, band structure and density of state (DOS) of TiO2 samples of anatase and rutile doped with 3d transition metals with and without oxygen defect is done using FHI-aims as a software package based o...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید