With tunable bandgap and demonstrated high efficiency, the chalcopyrite CuInSe2 and its alloys have shown great potential as absorbers for single and multi-junction solar cells. However, the current deposition techniques mostly rely on expensive vacuum-based processing or involve complicated precursor solution preparation. These higher-cost absorber preparation processes make it difficult to co...

A dimethylformamide (DMF) and thiourea (TU)-based ink deposition route (IDR) was used to fabricate narrow bandgap (∽1.0 eV) CuIn(S,Se)2 (CISSe) films with Cu-poor ([Cu]/[In]=0.85), stoichiometric ([Cu]/[In]=1.0), Cu-rich ([Cu]/[In]=1.15) compositions for photovoltaic (PV) applications. Characterization of KCN- or (NH4)2S- treated absorber using X-ray diffraction scanning electron microscopy con...

Sulphurization processes in Cu(In,Ga)Se$_2$ thin-film solar cells has been intensively studied the last decade as a viable alternative to existing Ga-grading. The main advantage of using S grading is that by substituting Se with we will achieve not only an upshift conduction-band minimum done employing Ga grading, but also downshift valence-band maximum. Several studies stipulate very often ins...

Electrodeposition of CuInSe2 (CIS) and CuInAlSe2 (CIAS) from aqueous solution has been systematically investigated by cyclic voltammetery implementing different scan rates. It has been shown that electrodeposited CIS and CIAS have been formed on the substrate through electrochemical-chemical interaction of reduces species on the substrate.  From the obtained results, it could be inferred that I...

The interest for pure sulfide Cu(In,Ga)S 2 chalcopyrite thin films is increasing again because their optical properties make them relevant candidates to be applied as top cell absorbers in tandem structures. Nonetheless, use so still hindered by the level of single-junction cells performance achieved far, which are far below those demonstrated selenide absorbers. Amongst reasons at origin limit...