نتایج جستجو برای: deep sub micron technologies
تعداد نتایج: 620929 فیلتر نتایج به سال:
Semiconductor technology has reached an end in the manufacture of conventional Metal Oxide semiconductor Field Effect Transistor (MOSFET). The continuous scaling of semiconductor devices has kept pace with Moore’s law and transistors below 1μm are grouped under deep sub-micron (DSM) technology node. But this trend seem to end beyond deep sub micron levels due to main design constraints such as ...
The continuous demand for improved CMOS transistors necessitate smailer device dimensions. The reduction in chip size into the deep sub-micron dimensions opens up new scientific and engineering challenges. One of the most critical material in developing deep sub-micron MOS transistors is high quality ultrathin (a few nm) gate dielectric film. As the gate dielectric thickness is reduced to below...
This paper discusses propagation delay error, transient response, and power consumption distribution due to inductive effects in optimal buffered on-chip interconnects. Inductive effect is said to be important to consider in deep submicron (DSM) VLSI design. However, study shows that the effect decreases and can be neglected in next technology nodes for such conditions. key words: on-chip inter...
Several regular circuit structures are proposed. They provide alternatives to the widely used standard-cell structure and have better predictability and a simpler design methodology. A regular global routing scheme is developed. A design flow for use with of all these regular fabrics is discussed.
A fabrication process has been developed for fully planarized Nb-based superconducting inter-layer connections (vias) with minimum size down to 250 nm for superconductor very large scale integrated (VLSI) circuits with 8 and 10 superconducting layers on 200-mm wafers. Instead of single Nb wiring layers, it utilizes Nb/Al/Nb trilayers for each wiring layer to form Nb pillars (studs) providing ve...
We discuss the test scheduling problem in this paper. We first provide a historical perspective of the original test scheduling formulation that dealt only with resource conflicts, followed by the consideration of power constraint test scheduling. We then move on to the recent formulations which include dealing with thermal constraint. We explain solutions, their limitations and the challenges ...
Turn-on efficiency is the main concern for silicon-controlled rectifier (SCR) devices used as on-chip electrostatic discharge (ESD) protection circuit, especially in deep sub-quarter-micron CMOS processes with much thinner gate oxide. A novel double-triggered technique is proposed to speed up the turn-on speed of SCR devices for using in on-chip ESD protection circuit to effectively protect the...
In order to confirm benefits of a deep sub-micron FD-SOI and to identify possible issues concerning front-end circuits with the FD-SOI, we have submitted a small design to Oki Electric Industry Co., Ltd. via the multi-chip project service of VDEC, the University of Tokyo. The initial test results and future plans for development are presented. r 2007 Elsevier B.V. All rights reserved. PACS: 07....
Deep sub-micron CMOS technologies provide wellestablished solutions to the implementation of low-noise front-end electronics in various detector applications. The IC designers’ effort is presently shifting to 130 nm CMOS technologies, or even to the next technology node, to implement readout integrated circuits for silicon strip and pixel detectors, in view of future HEP applications. In this w...
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