The parametric variations of FinFET in 22 nm due to doping concentrations are presented. In this paper different parameters of FinFET such as subthreshold slope, DIBL, threshold voltage, transconductance and Ioff are analysed using Synopsys Sentaurus 3D TCAD. From the results, it can be concluded that, optimized doping leads to better characteristics for the FinFET.

In this paper, gate leakage current has been mitigated by the use of novel nanoscale MOSFET with Source/Drain-to-Gate Non-overlapped and high-k spacer structure for the first time. A compact analytical model has been developed to study the gate leakage behaviour of proposed MOSFET structure. The result obtained has found good agreement with the Sentaurus Simulation. Fringing gate electric field...

This paper investigates the effect of gate electrode work function in 30 nm gate length conventional and junctionless FinFETs using technology computer-aided design (TCAD) simulations. DC parameters, threshold voltage (vt), drive current (Ion) and output resistance (Ro), and RF parameters, unity gain cutoff frequency (ft), non-quasi static (NQS) delay and input impedance (Z11) are investigated....

In this paper, we have investigated the effect of a single Grain Boundary (GB) on the performance of decananometer-scale Thin Film Transistors (TFTs) by using the calibrated energy balance transport model and a continuous trap state distribution at the GB. We have found that the GB potential barrier suppresses the subthreshold slope and leakage current in devices, where the DIBL effect and punc...

The relationship of drain induced barrier lowering (DIBL) phenomenon and channel length, silicon thickness, thicknesses top bottom gate oxide films is derived for asymmetric junctionless double (JLDG) MOSFETs. characteristics between the current voltage by using potential distribution model to propose in this paper. In case, threshold defined as corresponding when (W/L) × 10-7 A, DIBL represent...

The parametric variations of FinFET in 22 nm due to doping concentrations are presented. In this paper different parameters of FinFET such as subthreshold slope, DIBL, threshold voltage, transconductance and Ioff are analysed using Synopsys Sentaurus 3D TCAD. From the results, it can be concluded that, optimized doping leads to better characteristics for the FinFET.

This research paper explains the effect of dimensions Gate-all-around Si nanowire tunneling field transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors characteristics tunnel transistors. The Silvaco TCAD has been used to study electrical TFET. Output (gate voltage-d...

GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted much attention owing to the low-cost and large area availability of Si substrate. In this paper, 90-nm-gate-length InAlN/GaN HEMT was fabricated device electrical properties were studied. The presents a low drain-induced barrier lowing (DIBL) 43 mV/V, parasitic source resistance (RS) 0.91 ??mm, peak intrinsic tra...