نتایج جستجو برای: dielectric layer

تعداد نتایج: 317300  

2001
Z. Zhai P. V. Parimi J. B. Sokoloff S. Sridhar A. Erb

We report the observation of two dielectric transitions at 110 and 60 K in the microwave response of nonsuperconducting YBa2Cu3O6.0 crystals. The transitions are characterized by a change in polarizability and presence of loss peaks, associated with overdamped dielectric modes. An explanation is presented in terms of changes in polarizability of the apical O atoms in the Ba–O layer, affected by...

Journal: :Physica A 2008
Hui Chen Tianquan Lü Lian Cui Wenwu Cao

By taking into account surface transition layers (STL), the dielectric properties of ferroelectric thin films described by the transverse Ising model are discussed in the framework of the mean field approximation. Functions of the intra-layer and inter-layer couplings are introduced to characterize STL, which makes the model more realistic compared to previous treatment of surface layers using ...

Journal: :Applied optics 1994
J Lekner

Transmission ellipsometry measures the real and imaginary parts of the ratio τ = t(p)/t(s), where t(s), and t(s) are the transmission amplitudes for thep and s polarizations. For a homogeneous layer, the unknowns to be determined are the layer dielectric constant ε = n(2) and the layer thickness Δz. For nonabsorbing films the thickness can be eliminated, and an algebraic equation for e results....

Journal: :Scientific reports 2015
Bok Ki Min Seong K Kim Seong Jun Kim Sung Ho Kim Min-A Kang Chong-Yun Park Wooseok Song Sung Myung Jongsun Lim Ki-Seok An

Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this ...

2008
M. Roeckerath T. Heeg J. M. J. Lopes J. Schubert S. Mantl A. Besmehn P. Myllymäki L. Niinistö

Available online 17 August 2008 LaLuO3 thin films have bee

2011
T. Waggoner J. Triska K. Hoshino J. F. Wager

The dielectric properties of ZrO2–Al2O3 nanolaminates, deposited via atomic layer deposition, and their impact on the performance and stability of indium gallium zinc oxide and zinc tin oxide amorphous oxide semiconductor thin-film transistors TFTs are investigated. It is found that nanolaminate dielectrics can combine the advantages of constituent dielectrics and produce TFTs with improved per...

2013
David Liu Michael J. Sampson

The objective of this presentation is to gain insight into possible failure mechanisms in BaTiO3-based ceramic capacitors that may be associated with the reliability degradation that accompanies a reduction in dielectric thickness, as reported by Intel Corporation in 2010. The volumetric efficiency (μF/cm) of a multilayer ceramic capacitor (MLCC) has been shown to not increase limitlessly due t...

2017
Jiaxin Hou Wenwen Ding Yancong Feng Lingling Shui Yao Wang Hao Li Nan Li Guofu Zhou Felix H. Schacher

In electrowetting devices, hydrophobic insulating layer, namely dielectric layer, is capable of reversibly switching surface wettability through applied electric field. It is critically important but limited by material defects in dielectricity, reversibility, film forming, adhesiveness, price and so on. To solve this key problem, we introduced a novel fluorinated polyacrylate—poly(1H,1H,2H,2Hp...

Journal: :The Journal of chemical physics 2012
Stephan Gekle Roland R Netz

Proteins, molecules, and macromolecular assemblies in water are surrounded by a nanometer-sized hydration layer with properties very different from bulk water. Here, we use classical molecular dynamics simulations to study the dielectric response of hydration water next to hydrophobic and hydrophilic planar surfaces. We find the interfacial dielectric absorption of water to be strongly anisotro...

Journal: :Journal of Photopolymer Science and Technology 2009

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