This paper presents an analytical solution for an orthotropic circular cross section bar with a magnetic coating weakened by multiple arbitrary oriented cracks under Saint-Venant torsion by means of the distributed dislocation technique. At first, the solution of the orthotropic bar with a magnetic coating weakened by a Volterra-type screw dislocation is achieved with the aid of the finite Four...

The statistical characteristics of dislocation-induced elastic distortion fi elds in deformed FCC crystals are investigated both experimentally and theoretically. Discrete dislocation realizations are generated by the discrete dislocation dynamics method and the induced elastic distortion fi elds are computed by solving the corresponding boundary value problem. Moreover, sample three-dimensiona...

Recently, a dislocation free deformation mechanism was proposed by Kiritani et al., based on a series of experiments where thin foils of fcc metals were deformed at very high strain rates. In the experimental study, they observed a large density of stacking fault tetrahedra, but very low dislocation densities in the foils after deformation. This was interpreted as evidence for a new dislocation...

The interaction dynamics between dislocations and radiation induced sessile self-interstitial atom (SIA) dislocation loops in FCC metals are investigated. As a result of dislocation line flexibility, its equilibrium configuration is found to be sensitive to the elastic field of nearby SIA dislocation loops. Dislocation line flexibility also influences the critical stress to free trapped disloca...

Recently, a dislocation free deformation mechanism was proposed by Kiritani et al., based on a series of experiments where thin foils of fcc metals were deformed at very high strain rates. In the experimental study, they observed a large density of stacking fault tetrahedra, but very low dislocation densities in the foils after deformation. This was interpreted as evidence for a new dislocation...

Recent advances in the understanding and control of threading dislocations in substantially relaxed SiGe buffer layers on Si are presented. A model for threading dislocation flow in relaxed graded SiGe buffers is used to determine the potential lower limit of threading dislocation density in relaxed SiGe buffers. Greater densities than expected from the model are seen in relaxed graded alloys w...

We introduce a continuum model to describe the phase separation of a binary alloy in the presence of mobile dislocations. The kinetics of the local composition and dislocation density are coupled through their elastic fields. We show both analytically and numerically that mobile dislocations modify the standard spinodal decomposition process, and lead to several regimes of growth. Depending on ...