An n-channel insulated-gate field-effect transistor technology established at IBM Research has served as the basis for further development leading to FET memory. Designs and characteristics of experimental devices of 500 and 1000 A gate insulator thicknesses are presented, with particular attention to the effects of source-drain spacing. Introduction Because the insulated-gate field-effect tran...

In large-scale regional models, used for the management of underground resources, it is quite common to find that relationships between aquifer and small wetlands are not included. These models do consider this connection because amount water involved, but they should potential significant ecological impacts if groundwater resources in ecosystems associated with these mismanaged. The main objec...

This paper presents the analytical solution of radial consolidation a prefabricated vertical drain (PVD) foundation under unsaturated condition. In proposed modeling, air and water phases in are thought to dissipate horizontally toward drain, smear effect, resistance external time-dependent loading fully considered. The mathematical tools, namely general integration method, Fourier series expan...

We report on the numerical and theoretical results of sub-THz THz detection by a current-driven InGaAs/GaAs plasmonic field-effect transistor (TeraFET). New equations are developed to account for channel length dependence drain voltage saturation current. Numerical simulation demonstrate that effect bias current source-to-drain response ( dU) varies with device length. In long-channel TeraFET w...

Perifoliculitis capitis abscedens et suffodiens, dissecting folliculitis, dissecting cellulitis, or Hoffman disease is a rare, inflammatory and chronic condition, which affects the scalp of young black men, mainly characterized by the appearance of nodules and abscesses that drain purulent material with fistulas and pathways, leading ultimately to scarring alopecia. At present, this condition i...