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The dark conductivity, photoconductivity, and diffusion length have been determined in a comprehensive study on microcrystalline silicon samples, prepared under different deposition conditions: variation of substrate temperature, pressure, power, and silane to hydrogen ratio. The results show that the dark and majority carrier properties are correlated, which can be attributed to a Fermi-level ...

The charge carrier lifetime is an important parameter in solar cells as it defines, together with the mobility, the diffusion length of the charge carriers, thus directly determining the optimal active layer thickness of a device. Herein, we report on charge carrier lifetime values in bromine doped planar methylammonium lead iodide (MAPbI3) solar cells determined by transient photovoltage. The ...

Deliberate compensation of crystalline silicon results in a decrease in the equilibrium carrier concentration, which leads to an increased carrier lifetime for the intrinsic recombination processes of Auger and radiative recombination. We present modeling which reveals that compensation also often leads to a significant increase in lifetime for recombination through defects via the Shockley–Rea...

Abstract Efficient terahertz generation and detection are a key prerequisite for high performance systems. Major advancements in realizing efficient emitters detectors were enabled through photonics-driven semiconductor devices, thanks to the extremely wide bandwidth available at optical frequencies. Through ultrafast transport of charge carriers within photo-absorbing material, frequency compo...

Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. These defects provide energy levels within the bandgap and may act...

Ultrafast differential transmission measurements on a series of InN epilayers, grown by molecular beam epitaxy, have been employed to determine the carrier lifetimes and to probe the carrier recombination dynamics at room temperature. Differential transmission spectra reveal a peak energy of B0.7 eV on these samples, supporting the existence of the narrow band gap of InN. In addition, we observ...

We numerically study the mechanisms of frequency comb generation in the mid-infrared spectral region from cw-pumped silicon microring resonators. Coherent soliton comb generation may be obtained even for a pump with zero linear cavity detuning, through suitable control of the effective lifetime of free carriers from multiphoton absorption, which introduces a nonlinear cavity detuning via free-c...

Using GaAs epilayers with arsenic precipitates (GaAs:As) as the photoconductive material in a broad-band optoelectronic terahertz beam system, we have generated and detected freely propagating, subpicosecond electromagnetic pulses. The receiver signal gave a measured integrated pulse width of 0.71 ps. Fast photoconductive rise times have been achieved which are characteristic of good mobility G...