In this paper, we report the development of a high breakdown voltage InGaP/GaAs HBT process for low-to-mid power and high-voltage power amplifier operation. To achieve the high-breakdown InGaP HBT, two different collector designs and collector-etch processes were investigated. The first device process approach uses a thick GaAs collector with low n doping. The process challenges and considerati...

A Faraday probe with three concentric rings was designed and fabricated to assess the effect of gap width and collector diameter in a systematic study of the diagnostic ion collection area. The nested Faraday probe consisted of two concentric collector rings and an outer guard ring, which enabled simultaneous current density measurements on the inner and outer collectors. Two versions of the ou...

A vertically integrated alternative for integrated injection logic has been realized, named buried injector logic (BIL). 1 MeV ion implantations are used to create buried layers. The vertical pnp and npn transistors have thin base regions and exhibit a limited charge accumulation if a gate is saturated. d.c. and dynamic analysis of BIL-gate behaviour are given. A minimum gate delay of well belo...

A silicon-based spin transistor of novel operating principle has been demonstrated in which the current gain at room temperature is 1.4 (n-type) and 0.97 (p-type). This high current gain was obtained from a hybrid metal/semiconductor analogue to the bipolar junction transistor which functions by tunnel-injecting carriers from a ferromagnetic emitter into a diffusion driven silicon base and then...

5.1. BJT Fundamentals. In this section we discuss the main principles behind the operation of the BJT. The NPN bipolar transistor consists of 2 NP-PN junctions, as depicted in Fig. 5.1.a. The bipolar device is composed of two diodes back to back with different doping profiles; the BJT has 3 terminals labeled as E(Emitter), B(Base) and C(Collector). The emitter is the most doped terminal and emi...

The bipolarlFET characteristics of the ZDEG-HBT (TwoDimensional Electron Gas Base p-n-p AIGaAs/GaAs Heterojunction Bipolar Transistor) are analyzed extensively by a two-dimensional numerical simulator based on a drift-diffusion model. For bipolar operations at high collector current densities, it is confirmed that the cutoff frequency f r is determined mainly by the collector transit time of ho...

---A novel two zone step doped (TZSD) lateral bipolar junction transistor (LBJT) on silicon-oninsulator (SOI) with buried oxide thick step (BOTS) is proposed. The concept of linear doping and linear oxide thickness for increasing the breakdown voltage has been replaced by using step in doping and step in oxide thickness. These steps result in the creation of additional electric field peaks in t...

background: the use of electric current during application of etch-and-rinse adhesive systems has been recently introduced to decrease microleakage. this study investigated the effects of an electric field produced by an experimental device for the application of a two-step etch-and-rinse adhesive on moist dentin surface. methods: sixty freshly extracted human premolars were used for this study...

the computer simulation program of a practical scale reverse electrodialysis process has been developed based on the program for saline water electrodialysis. the program is applied to compute the performance of an industrial-scale reverse electrodialysis stack (effective membrane area s = 1 m × 1 m = 1 m2, cell pair number n = 300 pairs). the stack operatingconditions are optimized. seawater a...