The importance of the electron loss from the separate confinement layer (SCL) to the p-cladding in 1.5 μm lasers is analysed comparing two structures. One is a regular structure with strained InGaAsP quantum wells and a 1.15 μm emitting InGaAsP SCL and the second one incorporates an additional In0.81Ga0.19P electron stopper layer (about 50 meV high) at the interface between the p-cladding and t...

We show that at low concentrations (≤5 mM) TEMPONE radicals in liquid toluene exhibit higher DNP efficiency than in water. In spite of reduced coupling factors, the improved DNP performance in toluene results from favourable saturation and leakage factors, as determined by pulse electron-electron double resonance (ELDOR) and NMR relaxation, respectively. The extracted coupling factors at 0.35 T...

A dopant-free epitaxial technique is developed to achieve highly insulating buffers on semi-insulating GaN templates for nitride high electron mobility transistors by using the large polarization fields. The buffer leakage current density is reduced by several orders of magnitude, exhibiting outstanding insulating and breakdown properties. The simple polarizationand heterostructure-based soluti...

Some issues; leakage, tunneling currents, boron diffusion are threatening SiO2 to be used as a good gate dielectric for the future of the CMOS (complementary metal- oxide- semiconductor) transistors. For finding an alternative and novel gate dielectric, the NiO (Nickel oxide) and PVA (polyvinyl alcohol) nano powders were synthesized with the sol-gel method and their nano structural p...

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimensions and position of each floating gate are well-defined and controlled. The dev...

We investigate electron transport through a mono-atomic wire which is tunnel coupled to two electrodes and also to the underlying substrate. The setup is modeled by a tight-binding Hamiltonian and can be realized with a scanning tunnel microscope (STM). The transmission of the wire is obtained from the corresponding Green’s function. If the wire is scanned by the contacting STM tip, the conduct...

The upper and lower limits of the mechanistic stoichiometry (n) of electric charge translocation coupled to mitochondrial electron transport have been determined for the oxidation of succinate and beta-hydroxybutyrate using a recently described method (Beavis, A. D., and Lehninger, A. L. (1986) Eur. J. Biochem. 158, 307-314). This method requires no assumptions regarding the magnitude of proton...

In this paper, leakage current signatures in AlGaN HEMT are studied after storage at 300°C. By comparing gate pad topology and by localized FIB cuts, Optical Beam Induce Resistance Change (OBIRCh) analysis was used to localize current path. Results tend to indicate that mechanical stresses in the gate structure strongly influences the leakage current of the transistor. Electrical characterizati...

We investigated the influence of the thickness of the AlN interlayer for InAlN/GaN and InAlN/AlGaN/GaN heterostructures. The AlN thickness strongly affects the surface morphology and electron mobility of the InAlN/GaN structures. The rms roughness of the surface increases from 0.35 to 1.2 nm with increasing AlN thickness from 0 to 1.5 nm. Large pits are generated when the AlN is thicker than 1 ...