Infrared ellipsometry on hexagonal and cubic boron nitride thin films" (1997).

In the past, terahertz spectroscopy has mainly been performed based on time-domain systems in a transmission or window/prism-supported reflection configuration. These conventional approaches have limitations regard to characterizing opaque solids, conductive thin films, multiple-layer structures, and anisotropic materials. Ellipsometry is self-reference characterization technique with wide adap...

Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry" (2009). Faculty Publications from Nebraska Center for Materials and Nanoscience. Paper 99.

The influence of conformational and electrical properties of azobenzene molecules on the electron transfer barrier properties of their SAMs was studied by SECM and ellipsometry.

We propose and demonstrate a terahertz ~THz! time-domain spectroscopy combined with ellipsometry. The complex optical constants of a Si wafer with low resistivity are deduced from the measurements of the wave forms of reflected sand p-polarized THz pulses without reference measurement. The obtained dispersion of refractive index above ;0.2 THz shows good agreement with that predicted by the Dru...

We describe the use of spectroscopic ellipsometry and other characterization techniques for gate oxide process metrology in manufacturing of CMOS transistors for the 130 nm node and beyond. Specifically, we describe the difficulties associated with the introduction of silicon-on-insulator (SOI) substrates, alternative gate dielectrics (silicon oxynitride or metal oxides), and strained Si channe...

Nitrogen-doped thiophene plasma polymer [N-ThioPP] thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Thiophene was used as organic precursor (carbon source) with hydrogen gas as the precursor bubbler gas. Additionally, nitrogen gas [N2] was used as nitrogen dopant. Furthermore, additional argon was used as a carrier gas. The as-grown poly...

A novel scheme for the PECVD deposition and variableangle spectroscopic ellipsometry (VASE) characterization of silicon-based dielectrics for both, electronic and optical device application, is described. Depending on the application, different sensitivity and accuracy requirements will be placed on the VASE measurements and subsequent data analysis. As example, we consider dielectric distribut...