نتایج جستجو برای: field effect transistors

تعداد نتایج: 2338988  

2012
Chun-Yi Hsieh Yung-Ting Chen Wei-Jyun Tan Yang-Fang Chen Wan Y. Shih Wei-Heng Shih

Related Articles Polarization mechanism and quasi-electric-double-layer modeling for indium-tin-oxide electric-double-layer thinfilm-transistors Appl. Phys. Lett. 100, 113506 (2012) High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors Appl. Phys. Lett. 100, 113108 (2012) Integrated on-chip inductors with electroplated magnetic yokes (invited) J. Appl. Phys. 1...

Journal: :journal of nanostructures 2016
s. a. hashemizadeh

in this paper, the morphology, roughness and nano structural properties of sio2/poly vinyl pyrrolidone  synthesized with sol gel method,  characterized by using scanning electron microscopy, atomic force microscopy and gps132a techniques.the main material taken from oxide silicon with weight percentage of 20, 40, 60, 80 and from poly vinyl pyrrolidone with percentages of 80, 60, 40, 20 is synth...

2015
Junjie Wang Daniel Rhodes Simin Feng Minh An T. Nguyen K. Watanabe T. Taniguchi Thomas E. Mallouk Mauricio Terrones Luis Balicas J. Zhu

Articles you may be interested in Evaluation of pulsed laser annealing for flexible multilayer MoS2 transistors Appl. Schottky-barrier lowering in silicon nanowire field-effect transistors prepared by metal-assisted chemical etching Appl. Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors

2012
Ariel J. Ben-Sasson Zhihua Chen Antonio Facchetti Nir Tessler

Related Articles Exact control of junction position using epitaxial NiSi2 crystallization in ultrathin silicon-on-insulator metal-oxidesemiconductor field-effect transistors AIP Advances 2, 032126 (2012) Triisopropylsilylethynyl-functionalized anthradithiophene derivatives for solution processable organic field effect transistors Appl. Phys. Lett. 101, 043301 (2012) Electric field-induced scatt...

S. A. Hashemizadeh

In this paper, the morphology, roughness and nano structural properties of SiO2/Poly Vinyl Pyrrolidone  synthesized with sol gel method,  characterized by using scanning electron microscopy, atomic force microscopy and GPS132A techniques.The main material taken from oxide silicon with weight percentage of 20, 40, 60, 80 and from poly vinyl pyrrolidone with percentages of 80, 60, 40, 20 is synth...

2012
Du.-Zen Peng Ting-Chang Chang Hsiao-Wen Zan Tiao-Yuan Huang Chun-Yen Chang Po-Tsun Liu

Related Articles Physical understanding of negative bias temperature instability below room temperature J. Appl. Phys. 112, 104514 (2012) Lg=60nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator Appl. Phys. Lett. 101, 223507 (2012) The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors Appl. Phys. Lett. 101, 2...

2014
M. Tanzid M. A. Andersson J. Sun

Articles you may be interested in Graphene based field effect transistor for the detection of ammonia Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors Appl.

Journal: :Nano letters 2015
P M Solomon B A Bryce M A Kuroda R Keech S Shetty T M Shaw M Copel L-W Hung A G Schrott C Armstrong M S Gordon K B Reuter T N Theis W Haensch S M Rossnagel H Miyazoe B G Elmegreen X-H Liu S Trolier-McKinstry G J Martyna D M Newns

The piezoelectronic transistor (PET) has been proposed as a transduction device not subject to the voltage limits of field-effect transistors. The PET transduces voltage to stress, activating a facile insulator-metal transition, thereby achieving multigigahertz switching speeds, as predicted by modeling, at lower power than the comparable generation field effect transistor (FET). Here, the fabr...

Journal: :Nano letters 2009
Neophytos Neophytou Gerhard Klimeck

A 20-band sp(3)d(5)s* spin-orbit-coupled, semiempirical, atomistic tight-binding model is used with a semiclassical, ballistic, field effect transistor (FET) model, to examine the ON-current variations to size variations of [110]-oriented PMOS nanowire devices. Infinitely long, uniform, rectangular nanowires of side dimensions from 3 to 12 nm are examined and significantly different behavior in...

Journal: :The Analyst 2016
Hu Chen Jingfeng Huang Alagappan Palaniappan Yi Wang Bo Liedberg Mark Platt Alfred Iing Yoong Tok

In this review, recent advances in the development of electronic detection methodologies based on non-antibody recognition elements such as functional liposomes, aptamers and synthetic peptides are discussed. Particularly, we highlight the progress of field effect transistor (FET) sensing platforms where possible as the number of publications on FET-based platforms has increased rapidly. Biosen...

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