The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature T(C). It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band...

The abelian group E(Q) of rational points on E is finitely generated [Mor22]. Hence E(Q) ' Z ⊕ T for some nonnegative integer r (the rank) and some finite abelian group T (the torsion subgroup). The torsion subgroup is well understood, thanks to B. Mazur [Maz77], but the rank remains a mystery. Already in 1901, H. Poincaré [Poi01, p. 173] asked what is the range of possibilities for the minimum...

Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). DBS-driven instability in terms of V(TH) shift, deviation of the SS value, and increase in the on-state current were detected only for the IGZO-TFT, in contrast to the IGO-TFT, whic...

The Ugi reaction offers an effective method for preparing chromophore-appended DOTA-monoamide ligands, which can readily be elaborated to their lanthanide complexes.

greenhealth/n100.xml 8. Harsha DW, Bray GA. Body composition and childhood obesity. Endocrinol Metab Clin North Am. 1996;25:871--85. 9. Lewontin RC. Confusions about human races. Veröffentlicht 2005 [accessed 01.07.13]. Available from: http://raceandgenomics.

Let ` be a fixed rational prime number. Consider function fields K|k over algebraically closed fields k of characteristic 6= `. For each such a function field K|k, let Π K := Gal(K ′′|K) be the Galois group of a maximal pro-` abelian-by-central Galois extension K ′′|K, and ΠK = Gal(K ′|K) be the Galois group of the maximal pro-` abelian sub-extension K ′|K of K ′′|K. At the beginning of the 199...

In this work, CuIn1 - x Ga x Se2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu2 - x Se, and air voids ubiquitously observed in ns-PLD-derived CIGS thin ...

We report a large tunneling anisotropic magnetoresistance (TAMR) in (Ga,Mn)As lateral nanoconstrictions. Unlike previously reported tunneling magnetoresistance effects in nanocontacts, the TAMR does not require noncollinear magnetization on either side of the constriction. The nature of the effect is established by a direct comparison of its phenomenology with that of normal anisotropic magneto...