We present a self-consistent approach to examine current flow in a general metal–polar heterostructure junction. The approach is applied to examine properties of three classes of junctions that are important in devices: ~i! GaN/AlGaN structures that are used in nitride heterojunction field effect transistors; ~ii! GaN/AlGaN/high-k insulator structures for potential application in very small gat...

N type as well P type top gate microcrystalline silicon thin film transistors (TFTs) are fabricated on glass substrates at a maximum temperature of 200°C. The active layer is an undoped μc-Si film, 200 nm thick, deposited by Hot-Wire Chemical Vapor. The drain and source regions are highly phosphorus (N-type TFTs) or boron (P-type TFTs) doped μc-films deposited by HW-CVD. The gate insulator is a...

We investigate thermal noise mechanisms and present analytical expressions of the noise power spectral density at high frequencies (HF) in Silicon-on-insulator (SOI) MOSFETs. The developed HF noise model of RF T-gate body contact (TB) SOI MOSFET for 0.13-μm SOI CMOS technology accounts for the mechanisms of 1) channel thermal noise; 2) induced gate noise; 3) substrate resistance noise and 4) ga...

We report a method to improve the performance of polycrystalline Si (poly-Si) thin-film transistors (TFTs) via pressure-induced nucleation (PIN). During the PIN process, spatial variation in the local solidification temperature occurs because of a non-uniform pressure distribution during laser irradiation of the amorphous Si layer, which is capped with an SiO2 layer. This leads to a four-fold i...

Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. Here we report a reversible control of charge transport, metal-insulat...

0038-1101/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.sse.2012.05.061 ⇑ Corresponding author. E-mail address: [email protected] (J. Wan). We experimentally demonstrate a field-effect transistor with a single front gate built on fully-depleted silicon-on-insulator substrate that possesses extremely steep switching slope ( 1 mV/decade) and gate-controllable hysteresis. ...

A p-type MOSFET based on a heterointerface of hydrogenated-diamond transfer doped with MoO3 (Diamond:H/MoO3) is demonstrated for the first time. This is an important new heterostructure system due to its potentially improved temperature stability as compared with the better established Diamond:H/H2O system. MOSFETs using HfO2 as gate insulator show excellent output characteristics and gate cont...

This paper presents preliminary data on the transfer and output characteristics of a GeOXcladded Ge quantum dot (QD) gate Si MOSFET. The MOSFET is formed by depositing cladded QDs above the SiO2 gate insulator formed on pSi region, sandwiched between n-type source and drain. Ge (~ 2 to 8 nm) nanoparticles, cladded with GeOX (~1nm) layers, are deposited using site-specific self-assembly. In addi...

Water is composed of two strong electrochemically active agents, H(+) and OH(-) ions, but has not been used as an active electronic material in oxide semiconductors. In this study, we demonstrate that water-infiltrated nanoporous glass electrically switches an oxide semiconductor from insulator to metal. We fabricated a field-effect transistor structure on an oxide semiconductor, SrTiO(3), usin...