We report a high-performance graphene/Si field-effect transistor fabricated via rapid chemical vapor deposition. Oligolayered graphene with a large uniform surface acts as the local gate of the graphene transistors. The scaled transconductance, gm, of the graphene transistors exceeds 3 mS/μm, and the ratio of the current switch, Ion/Ioff, is up to 100. Moreover, the output properties of the gra...

We report on detailed room-temperature transport properties of a 17 nm thick double-gate silicon-on-insulator (DGSOI) transistor. We find that when the electron gas is transferred between the top and the bottom of the silicon-on-insulator (SOI) layer by changing the gate bias symmetry (i.e., applying the gate biases in a push–pull fashion), while keeping the carrier density constant the maximum...

The electron-hole (EH) Bilayer Tunneling FieldEffect Transistor promises to eliminate heavy-doping band-tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus on-state conductance to find the optimal device design. Once the EH Bilayer is optimized for ...

0038-1101/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.sse.2012.05.061 ⇑ Corresponding author. E-mail address: [email protected] (J. Wan). We experimentally demonstrate a field-effect transistor with a single front gate built on fully-depleted silicon-on-insulator substrate that possesses extremely steep switching slope ( 1 mV/decade) and gate-controllable hysteresis. ...

A GaN gate injection transistor (GIT) has great potential as a power semiconductor device. However, GIT diode characteristic at the gate-source, and corresponding drive circuit is thus required. Several studies in literature have proposed circuits with speed-up capacitors, but adding these capacitors complicates circuit, increases both reverse conduction losses. Moreover, driving such becomes m...

abstract: this paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (gnrfet). the results illustrate that the gnrfet under high temperature (ht-gnrfet) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay ...