نتایج جستجو برای: hafnium

تعداد نتایج: 1994  

Journal: :Physica Status Solidi A-applications and Materials Science 2023

Hafnium oxide is found to be a favorable material for ferroelectric nonvolatile memory devices. Its compatibility with complementary metal–oxide–semiconductor processes, the relatively low crystallization temperature when zirconium-doped, and thickness scaling are among advantageous properties of hafnium oxide. Different requirements must fulfilled different applications Herein, high-temperatur...

Journal: :Small 2023

Hafnium-Based Nanomaterials The clinical translation of hafnium oxide for cancer radiotherapy has aroused extensive interest on Hf-based nanomaterials biomedical application. In article number 2300341, Gan Tian, Wenyan Yin, and co-workers comprehensively summarize the recent advances in synthesis, computed tomography (CT)-involved diagnosis radiotherapy-related synergistic therapy nanomaterials...

2008
Gyung-Joo Jang Hoseop Yun

The title hafnium germanium telluride, HfGeTe(4), has been synthesized by the use of a halide flux and structurally characterized by X-ray diffraction. HfGeTe(4) is isostructural with stoichiometric ZrGeTe(4) and the Hf site in this compound is also fully occupied. The crystal structure of HfGeTe(4) adopts a two-dimensional layered structure, each layer being composed of two unique one-dimensio...

2012
Keunhee Park Seungsik Oh Donggeun Jung Heeyeop Chae Hyoungsub Kim Jin-Hyo Boo

We have used hafnium metallocene compounds as cathode interfacial layers for organic solar cells [OSCs]. A metallocene compound consists of a transition metal and two cyclopentadienyl ligands coordinated in a sandwich structure. For the fabrication of the OSCs, poly[3,4-ethylenedioxythiophene]:poly(styrene sulfonate), poly(3-hexylthiophene-2,5-diyl) + 66-phenyl C61 butyric acid methyl ester, bi...

2017
Bethany M. Hudak Sean W. Depner Gregory R. Waetzig Anjana Talapatra Raymundo Arroyave Sarbajit Banerjee Beth S. Guiton

High-temperature phases of hafnium dioxide have exceptionally high dielectric constants and large bandgaps, but quenching them to room temperature remains a challenge. Scaling the bulk form to nanocrystals, while successful in stabilizing the tetragonal phase of isomorphous ZrO2, has produced nanorods with a twinned version of the room temperature monoclinic phase in HfO2. Here we use in situ h...

Journal: :Dalton transactions 2013
Konstantin Press Vincenzo Venditto Israel Goldberg Moshe Kol

The activity of dibenzylzirconium and dibenzylhafnium Salalen complexes in polymerisation of propylene with MAO as a cocatalyst is described. Three Salalen ligand precursors combining a bulky alkyl group (1-adamantyl) on the imine-side phenol and electron withdrawing halo groups of different sizes on the amine-side phenol were explored. All metal complexes were obtained as single diastereomers....

2017
C. Boelsma L. J. Bannenberg M. J. van Setten N.-J. Steinke A. A. van Well B. Dam

Hydrogen detection is essential for its implementation as an energy vector. So far, palladium is considered to be the most effective hydrogen sensing material. Here we show that palladium-capped hafnium thin films show a highly reproducible change in optical transmission in response to a hydrogen exposure ranging over six orders of magnitude in pressure. The optical signal is hysteresis-free wi...

Journal: :ACS applied nano materials 2021

Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the of overlayer, bottom dielectric pregrown Si/TiN substrate. Either HfCl4 or Hf[N(CH3)(C2H5)]4 used as metal precursor for layer. O2 plasma-assisted process applied growing from also top To improve transfer, effects surface pretreatments as-grown and ag...

2014
H. L. Aldridge K. S. Jones A. G. Lind M. E. Law C. Hatem

Articles you may be interested in Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing Appl. Hard x-ray photoelectron spectroscopy study of As and Ga out-diffusion in In0.53Ga0.47As/Al2O3 film systems Appl.

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