A comprehensive methodology to qualify the reliability of GaN products 2 Introduction The industry takes the reliability of silicon power transistors for granted due to over thirty years of experience and continuous improvement. This longstanding experience has resulted in a mature qualification methodology, whereby reliability and quality are certified by running standardized tests. These test...

We show that a cryogenic amplifier composed of homemade GaAs high-electron-mobility transistor (HEMT) is suitable for current-noise measurements in mesoscopic device at dilution-refrigerator temperatures. The lower noise characteristics our HEMT lead to floor the experimental setup and enable more efficient measurement than available with commercial HEMT. present dc transport properties gain am...

We demonstrate an AlN/AlGaN high-electron-mobility transistor (HEMT) fabricated on a free-standing AlN substrate. A metal stack, composed of Zr/Al/Mo/Au, was found to show low contact resistivity for source and drain ohmic contacts. The fabricated AlN/AlGaN HEMT exhibited a maximum drain current of 38 mA/mm with a threshold voltage of -3.4 V. Negligible drain current degradation was observed at...

In this paper a study of the evolution over time of four different magnitudes in GaN HEMT’s will be presented. The experimental data measured at III-V Lab’s, as a result of a Life Test performed using as test vehicles six different GaN HEMT devices, allow the authors to find a way of modelling reliability by using specific mathematical functions developed to simulate the temporal dependence of ...

Moon-Que Lee et al. 199 ABSTRACT The phase noise reduction in a configuration of the HEMT oscillator with a dielectric resonator coupled by a quarter-wavelength impedance inverter is investigated. Two HEMT oscillators for a satellite payload system are manufactured in the same configuration except for the coupling configuration of the dielectric resonator (DR) in order to empirically demonstra...

In this work, a micromachined P-GaN power high electron mobility transistor (HEMT) on Si substrate with new air-bridged matrix design was demonstrated. After removal of the Si substrate beneath the P-GaN HEMT, a significant breakdown voltage improvement was observed. The drain and source terminals were arranged as the matrix type and the 3 m-thick Au was adopted for terminals connection and cur...

This paper reports on the joint multinational initiative KORRIGAN launched in 2005 to accelerate the development of independent GaN HEMT foundries in Europe. The project addresses several key research areas such as materials, processing, reliability, thermal management and advanced packaging solutions. The benefits of GaN technology will be evaluated at system level with the fabrication of circ...

High-reliability performance of a Q-band MMIC amplifier fabricated using TRW’s 0.1 μm production AlGaAs/GaAs HEMT process technology is reported. Operating at an accelerated life test conditions of Vds=4.2V and Ids=150mA/mm, two-stage balanced amplifiers were lifetested at threetemperatures (Ta=255 C, Ta=270 C, and Ta=285 C) in air ambient. The activation energy (Ea) is as high as 1.7 eV, achie...

The effects of strain relaxation of AlGaN barrier layer on the conduction band profile, electron concentration and two-dimensional gas (2DEG) sheet charge density in a high Al-content AlGaN/GaN high electron mobility transistor (HEMT) are calculated by self-consistently solving Poisson’s and Schrödinger’s equations. The effect of strain relaxation on dc I-V characteristics of AlxGa1−xN/GaN HEMT...

The observation of THz regime transmission resonances in an InGaAs/InP high electron mobility transistor (HEMT) can be attributed to excitation of plasmons in its two-dimensional electron gas (2DEG). Properties of grating-based, gatevoltage tunable resonances are shown to be adequately modeled using commercial finite element method (FEM) software when the HEMT layer structure, gate geometry and...