A key limitation in perovskite solar cell (PSC) performance is suboptimal electronic properties at the perovskite–transport layer (TL) interfaces, which result parasitic nonradiative recombination. Interface recombination depends on concentration of recombination-active defects, but as a event requires both an electron and hole, magnitude sign charge accumulation perovskite–TL heterojunctions a...

Abstract Trapped charge dating method using electron spin resonance (ESR) of quartz is progressively used for sediment dating. ESR signals can be accurate age estimation only when these are zeroed by sunlight exposure before the layer creation or one knows their residual level (the part signal that not bleached). It well known related to Al-hole centres in has a significant signal. From point v...

The ultrafast relaxation and recombination dynamics of photogenerated electrons and holes in epitaxial graphene are studied using optical-pump terahertz-probe spectroscopy. The conductivity in graphene at terahertz frequencies depends on the carrier concentration as well as the carrier distribution in energy. Time-resolved studies of the conductivity can therefore be used to probe the dynamics ...

Shockley-Read-Hall recombination kinetics has been applied to explain the luminescence mechanism of erbium luminescence in silicon. Erbium atoms in silicon have been considered as recombination centers with specific values of capture and emission coefficients. Electron-hole recombination through these levels has been considered to be the origin of erbium excitation. Equating the capture and emi...

In this paper, the study of the recombination of non-equilibrium charge carriers and determination of recombination mechanisms in Ge/Si heterostructures with nanoislands have been presented. The effects of long-term photoconductivity decay in Ge/Si heterostructures with Ge nanoislands have been found as caused by variations of the electrostatic potential in the near-surface region of Si(100) su...

We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes pen...

In the current study, pure TiO2 and Cr-doped TiO2 (Cr@TiO2) nanoparticles were synthesized via sol-gel method and the resulting materials were applied to prepare the porous TiO2 electrodes for dye-sensitized solar cells (DSSCs). It is hypothesized that the advantages of the doping of the metal ions into TiO2 lattice are the temporary rapping of the photogenerated electron-hole (charge carriers)...

CdTe is a key thin-film photovoltaic technology. Non-radiative electron-hole recombination reduces the solar conversion efficiency from an ideal value of 32% to current champion performance 22%. The cadmium vacancy (V_Cd) prominent acceptor species in p-type CdTe; however, debate continues regarding its structural and electronic behavior. Using ab initio defect techniques, we calculate negative...

Radiative recombination in a-Si:H at 1.4 eV is associated with recombination between electrons and holes trapped in the respective bandtails. According to the widely accepted radiative tunneling model two recombination regimes are to be expected with different kinetics: Geminate recombination at low and moderate generation rates and non-geminate distant pair recombination at high generation rat...