نتایج جستجو برای: i2 200 mm

تعداد نتایج: 331489  

2017
Louise M. Webster Frances Conti‐Ramsden Paul T. Seed Andrew J. Webb Catherine Nelson‐Piercy Lucy C. Chappell

BACKGROUND Chronic hypertension complicates around 3% of all pregnancies. There is evidence that treating severe hypertension reduces maternal morbidity. This study aimed to systematically review randomized controlled trials of antihypertensive agents treating chronic hypertension in pregnancy to determine the effect of this intervention. METHODS AND RESULTS Medline (via OVID), Embase (via OV...

2017
Frederico Canato Martinho Diego Guilherme Dias de Rabello Luciana Louzada Ferreira Gustavo Giacomelli Nascimento

This systematic review and meta-analysis aimed to evaluate the relationship between endotoxin levels and presence of clinical signs/symptoms and radiographic features in patients with endodontic infection. Electronic searches were performed on Medline/PubMed, Embase, Cochrane Library, Scielo, Science Direct, Web of Knowledge and Scopus databases for identification of relevant studies published ...

2010
María José García-Barrado María Francisca Pastor María Carmen Iglesias-Osma Christian Carpéné Julio Moratinos

The nature of the binding site(s) involved in the insulin secretory activity of imidazoline compounds remains unclear. An imidazoline I2 binding site (I2BS) has been neglected since the classic I2 ligand, idazoxan, does not release insulin. Using the rabbit as an appropriate model for the study of this type of binding sites, we have tried to re-evaluate the effects of idazoxan, the selective I2...

2004
Yatsuka Nakamura Andrzej Trybulec

The articles [8], [11], [10], [5], [1], [7], [12], [4], [3], [2], [9], and [6] provide the notation and terminology for this paper. In this paper i, j, k, k1, k2, n, m, i1, i2, j1, j2 are natural numbers. Let us consider i1, i2. We say that i1 and i2 are adjacent if and only if: (Def. 1) i2 = i1 + 1 or i1 = i2 + 1. One can prove the following propositions: (1) For all i1, i2 such that i1 and i2...

ژورنال: :فیض 0
غلامرضا مشتاقی کاشانیان gholam reza moshtaghi-kashanian department of biochemistry, faculty of afzalipoor medical, kerman university of medical sciences, kerman, i.r. iran.گروه بیوشیمی، دانشکده پزشکی افضلی پور، دانشگاه علوم پزشکی کرمان محمد حسن نژاد mohammad hassannejad

سابقه و هدف: استفاده از یک دوز بالای ید منجر به وجود آمدن بیماری خودایمنی تیروئید می شود. مطالعات نشان داده اند که عدم تعادل بین سیتوکین های در گردش خون یکی از عوامل آغاز کننده بیماری های خود ایمنی می باشد. در این مطالعه اثرات یدید سدیم (mm 10) و i2 (mm 5/0) بر لنفوسیت های t کمک کننده خون کامل، در محیط برون تنی مورد بررسی قرار گرفت. مواد و روش ها: پس از غربال گری 25 فرد سالم و در نظر گرفتن بررس...

Journal: :Nature Photonics 2021

Abstract Recent advances in photonic integrated circuits have enabled a new generation of programmable Mach–Zehnder meshes (MZMs) realized by using cascaded interferometers capable universal linear-optical transformations on N input/output optical modes. MZMs serve critical functions quantum information processing, quantum-enhanced sensor networks, machine learning and other applications. Howev...

Journal: :Applied Physics Letters 2022

In this work, we demonstrate the epitaxial growth of a gallium-nitride (GaN) buffer structure qualified for 1200 V applications on 200 mm engineered poly-AlN substrates with hard breakdown >1200 V. The manufacturability opens doors to high voltage GaN-based power such as in electric cars. Key achieving is careful engineering complex material stack combination use substrates. CMOS-fab fri...

Journal: :آب و خاک 0

abstract in order to study the effects of cultivation method and water quantities in drip irrigation on yield of potato, an experiment was carried out using a split plot based on randomized complete block design with 4 replications in torogh agricultural research station (mashhad, iran) for tow years (2001 and 2002). the main-plots were divided into 3 levels of irrigation: i1= 100, i2= 80 and i...

Journal: :Solid-state Electronics 2022

A detailed electrical characterization and transistor parameter extraction on 200 mm CMOS compatible GaN/Si HEMTs was performed down to deep cryogenic temperatures. The main parameters (threshold voltage Vth, low-field mobility ?0, subthreshold swing SS, source-drain series resistance Rsd) were extracted in linear region using the Y-function Lambert-W function methods for gate lengths 0.1 µm. m...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید