radiation enhanced diffusion at the surface of metals has been observed and studied for low-energy nitrogen ions at the surface of copper. the displacement of the target atoms during irradiation creates vacancies and other defects near the surface, thus enhancing the diffusion of implanted materials toward the surface and also into the solid. the mechanism has been studied here by a special met...

As complementary metal-oxide-semiconductor field-effect transistors (MOSFETs) scale, strained Si and SiGe technology have received more attention as a means of enhancing performance via improved carrier mobility. One of the biggest challenges for strained Si and SiGe technology is Si-Ge interdiffusion during thermal processing. Two different aspects of Si-Ge interdiffusion are explored in this ...

The effect of helium implantation fluences in French nuclear borosilicate glass on He bubble nucleation and growth mechanisms was characterised using in-situ TEM experiments. Observations of implanted glass at 143K indicate that a helium concentration of around 3 at.% is required to nucleate a significant density of nanosized bubbles. He bubble growth is observed for He concentration higher tha...

The construction of an alkali-metal ion source is presented. It allows the acceleration of rubidium ions to an energy that enables the penetration through monolayers of graphene and hexagonal boron nitride. Rb atoms are sublimated from an alkali-metal dispenser. The ionization is obtained by surface ionization and desorption from a hot high work function surface. The ion current is easily contr...

Depth profiling experiments using secondary ion spectrometry (SIMS) have shown effects that are characteristic to the pairing of the C60 projectile with a Si target. Previous molecular dynamics simulations demonstrate that this unusual behavior is due to the fact that strong covalent bonds are formed between the C atoms in the projectile and the Si atoms in the target, which result in the impla...

Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers silicon that can be easily activated and controlled is a main target the research field. Vacancy-related complexes are to provide electronic levels but they hard control spatially. With spirit investigating solid state devices with intent...

A study of the effect of Ge + implantation energy, dose, and temperature on the concentration of atoms bound by the extrinsic end-of-range dislocation loops in Si (100) wafers is presented. Plan-view and cross-sectional transmission electron microscopy observations of both the as-implanted and annealed (900 “C, 30 min) morphology were made. The implant energy was varied from 30 to 150 keV, the ...

The article deals with the effect of irradiation Si+ ions on phase transformations in Ti–Al system during thermal annealing. An aluminum film a thickness 500 nm was deposited VT1-00 titanium samples by magnetron sputtering, followed ion implantation. Samples before and after Si were annealed vacuum 10?4 Pa temperature range 600–1000 °C. It established that implantation reduces dissolution Al ?-...