One of the most active research areas in the field of radar applications is the development of collisionavoidance systems (CAS) for automotive industry. The first prototypes of HEMT-based CAS chipsets operating at 77GHz have been recently demonstrated [1]. Such chipsets will greatly benefit from the addition of a monolithic transceiver switch, which would allow using a single antenna for both t...

This paper presents the fabrication and characterisation of wet and reactive ion etched ridge waveguide InGaAs/InGaAsP/InP lasers with an operating wavelength of 1.5μm. Characterisation results of InGaAs/InGaAsP/InP lasers are given of two etching methods, namely wet chemical etching and reactive ion etching. Relative advantages and disadvantages of these two methods are also discussed comparat...

Schematic representation of orientation specific Ge/AlAs/GaAs and InGaAs/InP fin transistor architecture their carrier lifetimes.

The DC and RF characteristics of double heterojunction bipolar transistors (DHBTs) with a compressively strained InGaAsSb base prepared by solid-source molecular beam epatixy (MBE) are investigated. Compared with conventional InGaAs/InP DHBT structures, the proposed InGaAsSb/InP HBT exhibits lower baseemitter turn-on voltage and VCE-offset voltage. Also observed are the high collector current d...

1. growth of high dielectric constant oxides on InGaAs and GaN using molecular beam epitaxy (MBE) and atomic layer deposition (ALD) 2. structural studies on hetero-structures of nano-thick Al2O3, HfO2, and Ga2O3(Gd2O3)/ InGaAs (and GaN) using high-resolution x-ray reflectivity using in-situ/ex-situ high-resolution synchrotron radiation and high-resolution transmission electron microscopy 3. cor...

Complete suppression of the native n-type Schottky barrier is demonstrated in Al/InGaAs(001) junctions grown by molecular-beam-epitaxy. This result was achieved by the insertion of Si bilayers at the metal-semiconductor interface allowing the realization of truly Ohmic non-alloyed contacts in lowdoped and low-In content InGaAs/Si/Al junctions. It is shown that this technique is ideally suited f...

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Abstract A comprehensive overview of density functional theory simulations of high-k oxide/III-V semiconductor interfaces is presented. The methodologies of realistic amorphous high-k oxide generation by hybrid classical-DFT molecular dynamics are compared. The simulation techniques, oxide/semiconductor model designs and rules for formation of unpinned high-k oxide/semiconductor interfaces are ...

in this paper, we examine the effect of the energy difference between the l- and the -valleys in compound semiconductor materials, carrier effective mass, and the scattering processes on the electron transport characteristics in mesfets. to do this, we use the monte carlo simulation to demonstrate the superiority of the ingaas mesfet, made on a semi-insulating inp substrate, over both inp and ...

MetalInsulatorDoped semiconductor FieldEffect Transistors (MIDFETs) in which the InGaAs channel is heavily doped but the InAIAs insulator is undoped were pioneered by del Alamo and Mizutani at NTT Laboratories.1 These devices have been found to display a performance comparable to InAIAs/InGaAs ModulationDoped FETs (MODFETs) of similar gate length. They additionally offer unique benefits not fou...