Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and In...

This paper reports on a planar integrated technology which, unlike previous approaches, utilizes InP-based materials and airbridge technology to reduce parasitics by avoiding the use of a bridge-supporting dielectric. Verticalheterojunction varactors (VHV) and mixers were grown by the in-house Metalorganic-Chemical Vapor Deposition (MOCVD) system on S.1. InP substrates. A novel process is prese...

Extremely high cut-off frequencies (1) with excellent noise performance demonstrate the capability of heterostructure field-effect transistors (HFET) based on the InAlAs/InGaAs/InP material system for microwave communication systems and for opto-electronic applications. But, due to the low energy band-gap of the channel material, at high drain-source-voltages VDS impact ionization in the channe...

TECHNOLOGY In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. The MBE grown InP-based DHBTs with an emitter area of 1 × 4 μm exhibited peak cutoff frequencies (fT and fMAX) > 300 GHz, and a breakdown voltage (BVCEo) of ~ 5 V. The InP DHBT layer structures were grown on 3” semiinsulating InP substrat...

Objective(s): Injectable insulin is the most widely used therapy in patients with type 1 diabetes which has several disadvantages. The present study was aimed to evaluate the efficacy of injectable insulin on diabetes mellitus-related complications in comparison to orally encapsulated insulin nanoparticles.Materials and Methods: This stu...

Crystalline silicon thin film (c-Si TF) solar cells with an active layer thickness of a few micrometers may provide a viable pathway for further sustainable development of photovoltaic technology, because of its potentials in cost reduction and high efficiency. However, the performance of such cells is largely constrained by the deteriorated light absorption of the ultrathin photoactive materia...

I s history about to repeat itself in the wireless power amplifier industry with indium phosphide (InP) replacing the now dominate gallium arsenide (GaAs) semiconductor material just as GaAs replaced silicon for power amplifiers in the 1990s? There are a few companies that are currently exploring this avenue by commercializing InP for the wireless industry. InP is not a new technology. It is cu...

The avalanche photodiode (APD) is widely used in optical fibre communications (Campbell, 2007) due to its ability to achieve high internal gain at relatively high speeds and low excess noise (Wei et al., 2002), thus improving the system signal-to-noise ratio. Its internal mechanism of gain or avalanche multiplication is a result of successive impact ionisation events. In an optical receiver sys...

The motivation behind this work is to show that InP-based intersubband lasers with high power can be realized on substrates significant lattice mismatch. This a primary concern for the integration of mid-infrared active optoelectronic devices low-cost photonic platforms, such as Si. As evidence, an quantum cascade laser structure was grown GaAs substrate, which has large (4%) mismatch respect I...