نتایج جستجو برای: insulated gate field effect transistor

تعداد نتایج: 2363593  

2003
Wen-Lung Chou Ethan Tu

A constant exposure method for DSC IGBT strobe is proposed. This method is based on two lookup tables (exposure and energy table). In this method, light box is used to generate exposure table and different flash time is used to generate energy table. Through exposure table and preflash result, we can get digital number ratio of preflash to main flash. This ratio and energy table can be used for...

2001
Ju Won Baek Dong-Wook Yoo

For high-voltage applications, the series operation of devices is necessary to handle high voltage with limited voltage rating devices. In the case of self turn-off devices, however, the series operation of devices is very difficult. The main problem associated with series-connected devices is how to guarantee the voltage balance among the devices both at the static and the dynamic transient st...

Journal: :Microelectronics Reliability 2009
Hua Lu Chris Bailey Chunyan Yin

0026-2714/$ see front matter 2009 Published by doi:10.1016/j.microrel.2009.07.055 * Corresponding author. Tel.: +44 (0)20 8331 8660 E-mail address: [email protected] (C. Bailey). Power electronics uses semiconductor technology to convert and control electrical power. Demands for efficient energy management, conversion and conservation, and the increasing take-up of electronics in transport sys...

2017
Xianjin Huang Dengwei Chang Chao Ling Trillion Q. Zheng

In the application of vehicle power supply and distributed power generation, there are strict requirements for the pulse width modulation (PWM) converter regarding power density and reliability. When compared with the conventional insulated gate bipolar transistor (IGBT) module, the Reverse Conducting-Insulated Gate Bipolar Transistor (RC-IGBT) with the same package has a lower thermal resistan...

Journal: :E3S web of conferences 2021

Trench gate structure represents the latest of Insulated Gate Bipolar Transistor(IGBT). Because there are great differences in model analysis coordinate system and carrier transport between trench planar structure, modeling method using will inevitably have deviation. Based on characteristics system, base region is divided into PNP PIN by considering two-dimensional effect carriers. According t...

2013
Vivek Sharma Gaurav Mendiratta

This paper presents simulation results of the harmonics analysis of motor current signatures under different fault condition of CSI (Current Source Inverter) fed induction motor drive. In this work, simulation studies are performed for two different post fault conditions i.e. open circuiting of one of the six IGBTs(Insulated Gate Bipolar Transistor) gate, blowing off one IGBT .Under these fault...

Journal: :Microelectronics Reliability 2015
Paula Diaz Reigosa Rui Wu Francesco Iannuzzo Frede Blaabjerg

Article history: Received 26 May 2015 Received in revised form 30 June 2015 Accepted 3 July 2015 Available online xxxx

Journal: :J. Comput. Physics 2012
Florin Bobaru Monchai Duangpanya

We introduce a multidimensional peridynamic formulation for transient heat-transfer. The model does not contain spatial derivatives and uses instead an integral over a region around a material point. By construction, the formulation converges to the classical heat transfer equations in the limit of the horizon (the nonlocal region around a point) going to zero. The new model, however, is suitab...

Journal: :JCP 2012
Huaiyu Xu Jihui Xu Zhiqiang You Wenqi Peng Kunlin Zhang Jinfeng Xu

Design of traction system is important to decide the dynamic configuration of high speed EMU. And one of the most important factors that determine the design of traction system is the thermal distribution of IGBT convertors. Thermal simulation of IGBT converter using a two-step methodology (temperature rise and thermal distribution) and its simulation results are presented in this paper [1]. Th...

Journal: :Microelectronics Reliability 2005
Stephane Azzopardi A. Benmansour M. Ishiko Eric Woirgard

The purpose of this study is an assessment of the Trench IGBT reliability at low temperature under static and dynamic operations by the aim of intensive measurements. The analysis of the Trench IGBT behaviour in these conditions is dedicated to the HEV applications. One question can be raised in case of the use of HEV in countries where during winter the temperature drops down -50°C or less: ar...

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