Described here is a semiquantitative theoretical treatment of the kinetics of outer sphere electrochemical reactions. The framework presented here, which is based on simple physical arguments, predicts heterogeneous rate constants consistent with previous experimental observations (k0 > 10 cm/s). This theory is applied to the analysis of voltammetry experiments involving ultramicroelectrodes mo...

Hexagonal boron nitride (h-BN) is an insulating compound that is structurally similar to graphite. Like graphene, single sheets of BN are atomically flat, and they are of current interest in few-layer hybrid devices, such as transistors and capacitors, that contain insulating components. While graphite and other layered compounds can be intercalated by redox reactions and then converted chemica...

Two dimensional atomically thin crystals of graphene and its insulating isomorph hexagonal boron nitride (h-BN) are promising materials for spintronic applications. While graphene is an ideal medium for long distance spin transport, h-BN is an insulating tunnel barrier that has potential for efficient spin polarized tunneling from ferromagnets. Here, we demonstrate the spin filtering effect in ...

Abstract This paper reports on the fabrication and characterization of high quality factor (Q) copper (Cu) inductors with thick insulator on standard silicon (Si) substrate (ρ = 10–20 cm). The thickness and the area of the insulating layer are optimized for high Q by fabricating inductors on very thick (∼50 μm) embedded silicon dioxide (SiO2) islands and 4–20 μm thick PECVD SiO2 coated standard...

A diffusion-controlled theory is developed for the formation of a low-pressure, current-free double layer just inside an upstream insulating source chamber connected to a larger diameter, downstream chamber. The double layer is described using four groups of charged particles: thermal ions, monoenergetic accelerated ions flowing downstream, accelerated electrons flowing upstream, and thermal el...