Resonance Ionization Spectroscopy (RIS) technique is an ultrasensitive method of detection of atoms and molecules. Application of RIS to material analysis requires an atomization step which is based in our set-up on ion beam sputtering. We present a review of the analytical studies we have performed demonstrating the very attractive potentialities of this method. RIS can be also used to study t...

The morphological evolution of a GaAs surface induced by a focused ion beam (FIB) has been investigated by in situ electron microscopy. Under off-normal bombardment without sample rotation, Ga droplets with sizes from 70 to 25 nm in diameter on the GaAs surface can self-assemble into a highly ordered hexagonal pattern instead of Ostwald ripening or coalescence. The mechanism relies on a balance...

We have investigated magnetoresistance properties of (100) epitaxial, (111) textured and polycrystalline spin valve heterostructures on (100) Si substrates by UHV ion beam sputtering at room temperature. Magnetoresistance was measured as a function of Cu interlayer thickness (tl) with 10 A 5 tl 5; 100 A and the maximum was found at 20 A in the case of (100) epitaxial spin valves. Highly (1 11) ...

The level set method was generalized for simulating the evolution of surface multilayer substrates under focused ion beam irradiation. For a correct description such process calculations took into account sputtering yield angular dependences, densities irradiated materials and it considered that sputtered atoms can escape from different layers substrate. Comparison calculation results with expe...

The laser damage resistance of optical coatings is a key point for a large number of applications. The aim of this work is to test and analyze the laser damage resistance of a thin film material commonly used for high power applications (SiO2) and deposited with different techniques: Electron Beam Deposition, Ion Assisted Deposition, Low Voltage Reactive Ion Plating and Dual Ion Beam Sputtering...