نتایج جستجو برای: lead selenide

تعداد نتایج: 341308  

Journal: :Angewandte Chemie 2010
Peter M Allen Brian J Walker Moungi G Bawendi

This paper examines the molecular mechanism of InP colloidal quantum dot (QD) syntheses. Unlike methods for monodisperse PbSe and CdSe we found that existing InP syntheses result in total depletion of molecular phosphorous species following nucleation, so QD growth is due exclusively to non-molecular ripening. We find that amines inhibit precursor depletion via solvation, and these findings may...

2006
Mikhail Haurylau Jidong Zhang Sharon M. Weiss Philippe M. Fauchet Dmitri V. Martyshkin Valery I. Rupasov Sergei G. Krivoshlykov

Nonlinear optical response of photonic bandgap structures containing PbSe quantum dots Mikhail Haurylau a,∗, Jidong Zhang a, Sharon M. Weiss a,1, Philippe M. Fauchet a, Dmitri V. Martyshkin b, Valery I. Rupasov b, Sergei G. Krivoshlykov b a University of Rochester, Department of Electrical and Computer Engineering, Rochester, NY 14627, United States b ALTAIR Center, LLC 1 Chartwell Circle, Shre...

Journal: :Proceedings of the National Academy of Sciences of the United States of America 2012
Heng Wang Yanzhong Pei Aaron D LaLonde G Jeffrey Snyder

PbSe is a surprisingly good thermoelectric material due, in part, to its low thermal conductivity that had been overestimated in earlier measurements. The thermoelectric figure of merit, zT, can exceed 1 at high temperatures in both p-type and n-type PbSe, similar to that found in PbTe. While the p-type lead chalcogenides (PbSe and PbTe) benefit from the high valley degeneracy (12 or more at hi...

1998
X. M. Fang P. J. McCann S. Yuan W. K. Liu M. B. Santos

We report results on the incorporation of Bi ~n type! and Tl ~p-type! impurity in PbSe and PbEuSe grown on CaF2 /Si~111! by molecular beam epitaxy. Bi2Se3 and Tl2Se were used as sources of dopants in the growth. Electron concentrations in the low 10 cm range and hole concentrations in the middle 10 cm range have been realized in the PbSe and PbEuSe layers with Eu content up to 3%. Electron and ...

2016
Zhaoyang Lin Anxiang Yin Jun Mao Yi Xia Nicholas Kempf Qiyuan He Yiliu Wang Chih-Yen Chen Yanliang Zhang Vidvuds Ozolins Zhifeng Ren Yu Huang Xiangfeng Duan

Epitaxial heterostructures with precisely controlled composition and electronic modulation are of central importance for electronics, optoelectronics, thermoelectrics, and catalysis. In general, epitaxial material growth requires identical or nearly identical crystal structures with small misfit in lattice symmetry and parameters and is typically achieved by vapor-phase depositions in vacuum. W...

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