Crystallographic structures, optoelectronic properties, and nanoscale surface morphologies of ex situ phosphorus-doped polycrystalline silicon (poly-Si)/SiOx passivating contacts, formed by different deposition methods (sputtering, plasma-enhanced chemical vapour [PECVD], low-pressure [LPCVD]), are investigated compared. Across all these technologies, we noted the same trend: higher diffusion t...

AlGaN/GaN high electron mobility transistors (HEMTs) passivated with LPCVD SiyNz and AlxSiyNz were fabricated side-by-side, and their performance compared in DC, small-signal, and large-signal test environments. AlxSiyNz passivated devices measured a reduced dependence of source resistance with drain current density, 1.5 x the breakdown voltage, and an increased microwave output power and power...

Wafers with 1 μm LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical–mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si–Si hydrophilic bonding. A mechanis...

An electrostatic actuator and mechanical-amplifier (MA) device has been designed and fabricated to study fatigue properties of low-stress LPCVD silicon nitride thin films. The device consists of two resonators connected serially with a common torsion bar. When pumping electrostatic energy into the first resonator, the energy is transferred to the second resonator via the common torsion bar. The...

can be varied from perfectly isotropic to exactly straight. Also positive or negative tapering is po~s ib le .~ Various ways of fabricating channels in silicon are The basic approach for disyussed. Some new channels are presented: the constructing channels in GPSIC's and the LPCVD covered channels. Also some silicon is almost always attention is paid to the problem of making connections as depi...