We have studied the magnetoresistance of (001)Fe/(001)Cr superlattices prepared by molecularbeam epitaxy. A huge magnetoresistance is found in superlattices with thin Cr layers: For example, with rc, =9 A, at T =4.2 K, the resistivity is lowered by almost a factor of 2 in a magnetic field of 2 T. We ascribe this giant magnetoresistance to spin-dependent transmission of the conduction electrons ...

We have studied the electron transport in SiO2(Co)/GaAs and SiO2(Co)/Si heterostructures, where the SiO2(Co) structure is the granular SiO2 film with Co nanoparticles. In SiO2(Co)/GaAs heterostructures giant magnetoresistance effect is observed. The effect has positive values, is expressed, when electrons are injected from the granular film into the GaAs semiconductor, and has the temperature-p...

The magnetic properties of Fe ions implanted into a germanium crystal by metal-vapor vacuum arc ion source were investigated using a Quantum Design SQUID magnetometer. The presence of Fe nanoclusters in Ge was verified by magnetization measurements. A Langevin fit was used to obtain the size distribution of the clusters. The results demonstrated that the clusters are magnetic. The magnetic beha...

Resonant tunneling through states in the barrier of a magnetic tunnel junction has been analyzed theoretically for the case of a spin-polarized density of barrier states. It is shown that for highly spin-polarized barrier states, the magnetoresistance due to resonant tunneling is enhanced compared to the magnetoresistance due to direct tunneling between the ferromagnetic electrodes. Moreover, i...

Voltage control of magnetism in ferromagnetic semiconductor has emerged as an appealing solution to significantly reduce the power dissipation and variability beyond current CMOS technology. However, it has been proven to be very challenging to achieve a candidate with high Curie temperature (Tc), controllable ferromagnetism and easy integration with current Si technology. Here we report the ef...

Magnetoresistance is an important material property that is utilized in electronic compasses, hard disk drives, biosensors, and microelectromechanical systems (MEMS). In normal (nonmagnetic) conductors, magnetoresistance is a variation of the resistance that occurs when an external magnetic field influences how electrons flow through the material. In magnetic conductors, the magnetoresistance d...

The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the ...

Linear transverse magnetoresistance is commonly observed in many material systems including semimetals, narrow band-gap semiconductors, multi-layer graphene and topological insulators. It can originate in an inhomogeneous conductor from distortions in the current paths induced by macroscopic spatial fluctuations in the carrier mobility and it has been explained using a phenomenological semiclas...

Terahertz photovoltaic detection of cyclotron resonance in the regime of radiation-induced magnetoresistance oscillations Report Title We examine and compare the diagonal magnetoresistance, R-xx, and the photovoltage induced by microwave (42 <= f <= 300 GHz) and terahertz (f >= 300 GHz) photoexcitation in the high mobility quasi-two-dimensional GaAs/AlGaAs system. The data demonstrate strong ra...

We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [Phys. Rev. Lett. 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembl...