نتایج جستجو برای: mesfet integrated circuit

تعداد نتایج: 364875  

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه تهران 1386

چکیده ندارد.

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه صنعتی خواجه نصیرالدین طوسی - دانشکده مهندسی برق 0

در این پایان نامه آی سی ارائه شده، آی سی حفاظتی بوده که به دلایلی نظیر، امنیت بالا، حجم کوچک، سادگی مصرف، کاربردهای متنوع و... که در بخشهای بعدی توضیح داده خواهند شد. در این متن مدار سخت افزار ونرم افزاری ارائه شده که می تواند این آی سی تولید کننده رمز (nm95hs01&02) را که به اندازه 13 بایت حافظه eeprom دارد برنامه ریزی و رجیسترهای آن را فعال نماید. در پایان یکی از شایع ترین کاربردهای این آی سی ...

2006
Roxann Russell Blanchard Martin F. Schlecht

Recovered Energy Logic (REL) is a new family of logic that charges and discharges capacitive logic nodes in an ideally lossless fashion. To accomplish this, REL uses an AC waveform as both the system power supply and a two-phase clock. Unlike mainstream logic circuits, REL circuits require substantial current from all three terminals of a transistor. This makes BJTs and MESFETs a natural choice...

Journal: :Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 2014

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه شهید بهشتی - دانشکده مهندسی برق و کامپیوتر 1387

چکیده ندارد.

2002
Carsten Wulff Trond Ytterdal

1 Carsten Wulff, Norwegian University of Science and Technology, Department of Physical Electronics, Trondheim, Norway [email protected] 2 Trond Ytterdal, , Norwegian University of Science and Technology, Department of Physical Electronics, Trondheim, Norway [email protected] Abstract  The work presented here aims to outfit remotely operated laboratories with circuit programmability throug...

1994
Dennis Pu Alejandro F. González

This paper describes the complete test, functional and parametric, of a 1Kb GaAs MESFET SRAM chip. The chip was developed as an evaluation vehicle for a new type of MESFET SRAM cell. The new cell, in contrast with conventional GaAs memory cells, minimizes the leakage current in access transistors of unselected cells. Two algorithms were selected for functional testing: MATS and Galloping Ones a...

2011
M. Razavi Ali A. Orouji Seyed Ebrahim Hosseini

We report, for the first time, a silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) which has a recessed p-buffer layer into the channel region near the source and a recessed channel into the p-buffer layer region near the drain under the gate. The length and thickness of the channel recess into the p-buffer layer are larger than the pbuffer recess into the channel...

Journal: :IEEE Trans. Education 2001
David J. Comer Donald T. Comer

The enhancement-mode MOSFET is the primary active device used in present-day digital and mixed-signal integrated circuit processes. Thus, it is important to introduce this device and associated circuit design methods early in the electronics curriculum. This article discusses four integrated circuit MOSFET amplifier configurations; the current source/active load stage, the source follower, the ...

2000
Yaser A. Khalaf Wayne A. Scales Ioannis M. Besieris Aicha A. Elshabini Samir M. El-Ghazaly

(Abstract) Accurate small and large-signal models of metal-semiconductor field effect transistor (MESFET) devices are essential in all modern microwave and millimeter wave applications. Those models are used for robust designs and fabrication development. The sophistication of modern communication systems urged the need of monolithic microwave integrated circuits (MMICs), which consists of many...

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