Metal-assisted etching is initiated by hole injection from an oxidant catalyzed by a metal nanoparticle or film on a Si surface. It is shown that the electronic structure of the metal/Si interface, i.e., band bending, is not conducive to diffusion of the injected hole away from the metal in the case of Ag or away from the metal/Si interface in the cases of Au, Pd, and Pt. Since holes do not dif...

A highly ordered and damage-free microscale Ge inverted pyramid array is fabricated by HF-free metal-assisted chemical etching. The exhibits significant broadband antireflection properties in the mid-infrared region.

Many potential applications of porous silicon nanowires (SiNWs) fabricated with metal-assisted chemical etching are highly dependent on the precise control of morphology for device optimization. However, the effects of key etching parameters, such as the amount of deposited metal catalyst, HF-oxidant molar ratio (χ), and solvent concentration, on the morphology and etching kinetics of the SiNWs...

In the current study, monocrystalline silicon nanowire arrays (SiNWs) were prepared through a metal-assisted chemical etching method of silicon wafers in an etching solution composed of HF and H2O2. Photoelectric properties of the monocrystalline SiNWs are improved greatly with the formation of the nanostructure on the silicon wafers. By controlling the hydrogen peroxide concentration in the et...

Abstract Metal-assisted etching of silicon in HF aqueous solution has attracted widespread attention due to its potential applications electronics, photonics, renewable energy, and biotechnology. In this paper, the basic process mechanism metal assisted electrochemical vapor or liquid atmosphere based on galvanic cells are reviewed. This paper focuses use gas-phase oxidants O 2 H instead phase ...

The charge transport mechanism during metal-assisted chemical etching of Si nanowires with contiguous metal films has been investigated. The experiments give a better insight how the charges and reaction products can penetrate to the etching front. The formation of a layer of porous Si between the metal film and the bulk Si is a prerequisite for the etching process. The electronic holes (positi...

Abstract The effect of the etching solution concentration on profile vertical microscale holes formed a Si(100) substrate by metal-assisted chemical (MacEtch) was investigated. MacEtch performed at different ratios (characterized their molar ratio <mml:math xmlns:mml="http://www.w3.org/1998/Math/Mat...