نتایج جستجو برای: metalorganic framework
تعداد نتایج: 463273 فیلتر نتایج به سال:
Thick GaN layers have been grown by hydride vapor phase epitaxy (HVPE) on different GaN templates grown by metalorganic vapor phase epitaxy. Crack formation could be reduced by using a hydrogen/nitrogen carrier gas mixture. By carefully optimizing the growth conditions in the final stage of the process, excellent surface morphologies could be obtained at still acceptably high growth rates. Up t...
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The aim of this paper is to consider optical and electrical properties of MOVPE GaN homostruture LEDs. The sample that has been selected for the study, doped with Si and Mg for n and p region of junction, respectively. The V-I and L-I characteristics of this device indicate that diffusion and space charge currents have the main role in luminescence, because in this current range defects levels ...
We make a comparative study of the luminescent properties of InGaP films grown on GaAs substrates by two different growth techniques: liquid phase epitaxy (LPE) and metal-organic vapor phase epitaxy (MOVPE). The grown InxGa1KxP (xz0.5) films were nearly lattice matched to GaAs and had the same thickness of approximately 0.5 mm. Photoluminescence (PL) measurements were performed in a wide temper...
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