The enhancement-mode MOSFET is the primary active device used in present-day digital and mixed-signal integrated circuit processes. Thus, it is important to introduce this device and associated circuit design methods early in the electronics curriculum. This article discusses four integrated circuit MOSFET amplifier configurations; the current source/active load stage, the source follower, the ...

In this paper the usefulness of the nth power law MOSFET model under Hot Carrier Injection (HCI) wearout has been experimentally demonstrated. In order to do that, three types of nFET transistors have been analyzed under different HCI conditions and the nth power law MOSFET model has been extracted for each sample. The results show that the model can reproduce the MOSFET behavior under HCI wear...

In this paper we report effect of optical illumination on Silicon MOSFET. The MOSFET has been studied in respect of current voltage, transconductance admittance and scattering parameters. Gain analysis of the Silicon MOSFET is done in dark and under optical illumination. The device is fabricated using ATHENATM process simulator and the device simulation is performed using ATLASTM from SILVACO i...

In this paper, we report the effect of luminous behaviour of transparent gate Recessed Channel MOSFET (RC-MOSFET).Aggressive scaling is associated with a number of higher order effects such as short channel effects, hot carrier effects and heating effect which significantly affect the device performance. The Ray trace method in MOSFET has emerged to be the ultimate solution. The proposed device...

We report the integration of a MOSFET with a field emission arrays to obtain low voltage switching and more stable emission in field emission devices. Instead of the traditional feedback resistor stabilization in the emitter circuit, a MOSFET is used as a voltage controlled current source thereby stabilizing the emission current and resulting in low voltage switching. In this device, the emitte...

Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia. As a result it has become the predominant MOSFET topology that encompasses discrete MOS power switches and CMOS. By contrast, the depletion-mode MOSFET has not received the same attention or popular...

The characteristics of a typical 70nm high K gate dielectrics MOSFET with different source/drain structure including S/D lift-up structure are simulated by two dimensional device simulator. The impact of FIBL effect the gate dielectric permikttivity increasing to the characteristics of MOSFET is investigated. The simulation results shows that the degradation of MOSFET characteristics can be sup...

For low power circuits downscaling of MOSFET has a major issue of scaling of voltage which has ceased after 1V. This paper highlights comparative study and analysis of pocket double gate tunnel FET (DGTFET) with MOSFET for low standby power logic circuits. The leakage current of pocket DGTFET and MOSFET have been studied and the analysis results shows that the pocket DGTFET gives the lower leak...

Lowering both the threshold voltage (Vth) and subthreshold swing (S) at the same time is essentially required for O.1pm and below O.lym MOSFETs with low supply voltage. In this paper, we discuss a temperature scaling concept of MOSFET and the device characteristics of the fabricated 77K MOSFETs. In the temperature scaling concept, the physical quantities relating to potential are scaled with op...

In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leak...