نتایج جستجو برای: mosfet dosimetry
تعداد نتایج: 11119 فیلتر نتایج به سال:
PURPOSE Solid state detectors from two independent systems have shown similar over-responses to small electron fields used for treatment of surface lesions. We propose to evaluate the accuracy of solid state detector systems for highly blocked electron fields as a method for clinical dosimetry and determine the cause for any deviations from expected dose-delivery calculations. METHODS A QED D...
BACKGROUND Intraoperative electron radiotherapy (IOERT) is a highly selective radiotherapy technique which aims to treat restricted anatomic volumes during oncological surgery and is now the subject of intense re-evaluation. In vivo dosimetry has been recommended for IOERT and has been identified as a risk-reduction intervention in the context of an IOERT risk analysis. Despite reports of fruit...
Introduction: Due to the prevalence of skin problems in patients after radiotherapy, skin dose measuring is importance. Content: Skin in vivo dosimetry means measuring the patient's (or phantom) skin dose during radiotherapy. According to the ICRP 59, the dose at the depth of 0.07 mm is known as a skin dose. The most radiosensitive epidermis cells are located...
PO-0942: Real time in vivo dosimetry for cervix HDR brachytherapy - feasibility study using a MOSFET
Low-power, compact, and highperformance NP dynamic CMOS circuits are presented in this paper assuming a 16 nm carbon nano tube transistor technology. The performances of two-stage pipeline 32-bit carry lookahead adders are evaluated based on HSPICE simulation with the following four different implementations: silicon MOSFET (Si-MOSFET) domino logic, Si-MOSFET NP dynamic CMOS, carbon nanotube MO...
This paper discusses the type of capacitances for Single Gate MOSFET and Double Gate MOSFET including their quantity. The effect of parasitic capacitance makes double gate MOSFET more suitable component for the designing of digital logic switches than single gate MOSFET. Here, we introducing Independent double gate MOSFET operation based on VeSFET concept. Then introducing with the total capaci...
High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have bee...
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