We have detected the neural cell adhesion molecule, N-CAM, at nerve-muscle contacts in the developing and adult mouse diaphragm. Whereas we found N-CAM staining with fluorescent antibodies consistently to overlap with the pattern of alpha-bungarotoxin staining at nerve-muscle contacts both during development and in the adult, we observed N-CAM staining on the surfaces of developing myofibers an...

Diagnosis of large discrete event systems leads to combinatorial explosion. We propose to solve this issue by ignoring some connections on the system and using a junction treebased approach. Removing connections reduces both the cost and the accuracy of the diagnosis. Therefore, we perform an off-line analysis to determine which connections can be safely ignored.

In two experiments we manipulated the prior probability of occurrence for two alternatives. After a first learning session, in a second session the cue to bias the decision was reversed. Our investigation shows that subjects are able to learn the reverse bias only when the bias of the first session is in line with their expected outcome. When, during the first session, the actual outcome of the...

Analog electronics course is an important fundamental electric course. It is difficult to study and its content is difficult to comprehend and master. Animated coursewares of PN junction and negative feedback circuits are designed and made using flash technology. They can dynamically demonstrate the motion of carriers, the formation of PN junction and the label of instant polarity. By watching ...

A technology is reviewed which allows one to produce quasi-lateral 2D electron and hole gas junctions of arbitrary shape. It may be implemented in a variety of semiconductor heterostructures. Here we concentrate on its realization in the GaAs/AlGaAs material system and discuss the possibility to use this structure for optical spin detection in low-dimensional systems.

The Gamow vector description of resonances is compared with the S-matrix and the Green function descriptions using the example of the square barrier potential. By imposing different boundary conditions on the time independent Schrödinger equation, we obtain either eigenvectors corresponding to real eigenvalues and the physical spectrum or eigenvectors corresponding to complex eigenvalues (Gamow...

On-chip ESD protection circuits realized with novel diode structures without the field-oxide boundary across the p/n junction are proposed. A PMOS (NMOS) is especially inserted into the diode structure to form the PMOS-bounded (NMOS-bounded) diode, which is used to block the field oxide isolation across the p/n junction in the diode structure. Without the field oxide boundary across the p/n jun...

This work investigates two silicon (Si) photodiodes (PDs) fabricated in 40 nm standard CMOS technology. The basic structure of the proposed Si PD is formed by N+/P-substrate and N-well/P-substrate diodes. The N+/P-substrate PD demonstrates a responsivity of 0.09 A/W and an electrical bandwidth of 3 GHz for 8 V reverse bias at 520 nm. The N-well/P-substrate PD demonstrates a responsivity of 0.24...

p–p–n –n ultraviolet photodetectors based on 4H–SiC homoepilayers have been presented. The growth of the 4H–SiC homoepilayers was carried out in a LPCVD system. The size of the active area of the photodetectors was 300 300mm. The dark and illuminated I–V characteristics had been measured at reverse biases form 0 to 20V at room temperature, and the illuminated current was at least two orders of ...

High speed photodetectors are most sophisticated optoelectronic devices, because it has high photo sensitivity, low noise, high conversion efficiency and allow a large wavelength range of detection from 750 nm to 1.3–1.55 μm in the optical communication system. These photodetector is used as an optical receiver which transforms the energy of optical radiation such as infrared, visible or ultrav...