High sensitivity and a high speed nanoscale measurement becomes an important subject in modern industry, when analysis of high speed moving nanoscale objects on a surface is required. Recently we have shown a possible approach to this problem using singular beam microscopy. Singular beam microscopy performs scanning by utilization of the relative movement between the focused singular beam and t...

High sensitivity and a high speed nanoscale measurement becomes an important subject in modern industry, when analysis of high speed moving nanoscale objects on a surface is required. Recently we have shown a possible approach to this problem using singular beam microscopy. Singular beam microscopy performs scanning by utilization of the relative movement between the focused singular beam and t...

Plasmonic wireless nanolinks hold great promise to overcome limitations from conventional metallic wires, namely, narrow bandwidths, Ohmic losses, dispersion, and cross-talking. However, current developments are limited the communication between two fixed points, i.e., a transmitter with receiver, which in turn limits energy efficiency integration levels. In this work, we propose use of magneti...

Science and industry demand ever more sensitive measurements on ever smaller systems, as exemplified by spintronics, nanoelectromechanical system, and spin-based quantum information processing, where single electronic spin detection poses a grand challenge. Superconducting quantum interference devices SQUIDs have yet to be effectively applied to nanoscale measurements. Here, we show that a simp...

Scattering scanning near-field optical microscopy (s-SNOM) has been demonstrated as a valuable tool for mapping the optical and optoelectronic properties of materials with nanoscale resolution. Here we report experimental evidence that trapped electric charges injected by an electron beam at the surface of dielectric samples affect the sample-dipole interaction, which has direct impact on the s...

A single electron memory was demonstrated in crystalline silicon that has a transistor channel width of ;10 nm and a nanoscale floating gate of dimension ;~7 nm 3 7 nm 3 2 nm!, patterned by electron beam lithography, lift-off, and reactive ion etching. Quantized shift in the threshold voltage and self-limited charging process have been observed at room temperature. Analysis has shown that these...