نتایج جستجو برای: nanoscale transistor
تعداد نتایج: 41975 فیلتر نتایج به سال:
Reduction of graphene oxide at the nanoscale is an attractive approach to graphene-based electronics. Here we use a platinum-coated atomic force microscope tip to locally catalyse the reduction of insulating graphene oxide in the presence of hydrogen. Nanoribbons with widths ranging from 20 to 80 nm and conductivities of >10(4) S m(-1) are successfully generated, and a field effect transistor i...
The performance of nanoscale Field Effect Diodes as a function of the spacer length between two gates is investigated. Our numerical results show that the Ion/Ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for S-FED as the spacer length between two gates increases whereas this ratio is approximately constant for M-FED. The high-frequency perform...
A nanoscale device consisting of a metal nanowire, a dielectric, and a gate is proposed. A combination of quantum and thermal stochastic effects enable the device to have multiple functionalities, serving alternately as a transistor, a variable resistor, or a simple resistive element with I −V characteristics that can switch between ohmic and non-ohmic. By manipulating the gate voltage, stochas...
Photons rarely interact—which makes it challenging to build all-optical devices in which one light signal controls another. Even in nonlinear optical media, in which two beams can interact because of their influence on themedium’s refractive index, this interaction is weak at low light levels. Here, we propose a novel approach to realizing strong nonlinear interactions at the single-photon leve...
We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional metal-oxide-semiconductor field-effect transistors in reverse source drain bias. Reduction of nanowire width below 200 nm leads to dramatic change in the threshold voltage. D...
Recording intracellular (IC) bioelectrical signals is central to understanding the fundamental behaviour of cells and cell networks in, for example, neural and cardiac systems. The standard tool for IC recording, the patch-clamp micropipette is applied widely, yet remains limited in terms of reducing the tip size, the ability to reuse the pipette and ion exchange with the cytoplasm. Recent effo...
We have demonstrated a room-temperature silicon single-electron transistor memory that consists of ~i! a narrow channel metal-oxide–semiconductor field-effect transistor with a width ~;10 nm! smaller than the Debye screening length of single electron; and ~ii! a nanoscale polysilicon dot ~;737 nm! as the floating gate embedded between the channel and the control gate. We have observed that stor...
The novel electronic properties of graphene, including a linear energy dispersion relation and purely two-dimensional structure, have led to intense research into possible applications of this material in nanoscale devices. Here we report the first observation of saturating transistor characteristics in a graphene field-effect transistor. The saturation velocity depends on the charge-carrier co...
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