In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar...

The current conduction process through a nanowire wrap-around-gate,B50nm channel diameter, silicon MOSFET has been investigated and compared with a B2mm wide slab, B200nm thick silicon (SOI) top-only-gate planarMOSFETwith otherwise similar doping profiles, gate length and gate oxide thickness. The experimental characteristics of the nanowire and planar MOSFETs were compared with theoretical sim...

In this work, we report a direct synthesis of vertically aligned ZnO nanowires on fluorine-doped tin oxide-coated substrates using the chemical vapor deposition (CVD) method. ZnO nanowires with a length of more than 30 μm were synthesized, and dye-sensitized solar cells (DSSCs) based on the as-grown nanowires were fabricated, which showed improvement of the device performance compared to those ...

The output of a piezoelectric nanogenerator based on ZnO nanowire is largely affected by the shape of nanowire. In order to obtain mechanically stable nanogenerator with high performance, the investigation of mechanical and electrical characteristics related to the nanowires and materials used in nanogenerators are of great interest and significance. This paper presents the various behavior of ...

Nanowire is a cylindrical nano-structure with nanometer dimensions. In this research, the studied nanowire was made from the magnetic triple Ni-Fe-Co alloy.&#10 We utilized ordered porous anodic aluminum oxide as a template for the nanowire deposition. The nanowire arrays were electrodeposited in the cylindrical pores of the oxide layer by AC potential in a simple sulfate bath. Then the relatio...

We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes, and each contact was selectively silicided by means of the Joule effect. By a real-time monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nick...

Nanowire field effect transistors (NW-FETs) can serve as ultrasensitive detectors for label-free reagents. The NW-FET sensing mechanism assumes a controlled modification in the local channel electric field created by the binding of charged molecules to the nanowire surface. Careful control of the solution Debye length is critical for unambiguous selective detection of macromolecules. Here we sh...

A method for growing vertical ZnO nanowire arrays on arbitrary substrates using either gas-phase or solution-phase approaches is presented. A approximately 10 nm-thick layer of textured ZnO nanocrystals with their c axes normal to the substrate is formed by the decomposition of zinc acetate at 200-350 degrees C to provide nucleation sites for vertical nanowire growth. The nanorod arrays made in...

We present a design principle to develop new categories of telluride-based thermoelectric nanowire heterostructures through rational solution-phase reactions. The catalyst-free synthesis yields Te-Bi(2)Te(3) "barbell" nanowire heterostructures with a narrow diameter and length distribution as well as a rough control over the density of the hexagonal Bi(2)Te(3) plates on the Te nanowire bodies, ...