Rafi Ullah,1,* Fabiano Corsetti,1 Daniel Sánchez-Portal,2,3 and Emilio Artacho1,3,4,5 1CIC nanoGUNE, Ave. Tolosa 76, 20018 Donostia-San Sebastián, Spain 2Centro de Fı́sica de Materiales CSIC-UPV/EHU, Paseo Manuel de Lardizabal 5, 20018 Donostia-San Sebastián, Spain 3Donostia International Physics Center, Paseo Manuel de Lardizabal 4, 20018 Donostia-San Sebastián, Spain 4Theory of Condensed Matte...

We present first-principles calculations of electronic structures of a class of two-dimensional (2D) honeycomb structures of group-V binary compounds. Our results show these new 2D materials are stable semiconductors with direct or indirect band gaps. The band gap can be tuned by applying lattice strain. During their stretchable regime, they all exhibit metal-indirect gap semiconductor-direct g...

In this work, first-principles calculations have been utilized to predict the existence of a new Cu2TeO6 monolayer. It is shown that predicted material dynamically and thermally stable. The monolayer also found be narrow band gap semiconductor with size 0.20 eV. Considering obtained properties monolayer, it proposed for applications in various nanodevices electronics straintronics.

The potentiality of millimter-wave (mm-wave) double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on a wide bandgap (WBG) semiconductor material, Gallium Phosphide (GaP) has been explored in this paper. A non-sinusoidal voltage excited (NSVE) large-signal simulation method has been used to study the DC and high frequency characteristics of DDR GaP IMPATTs dsigned to ope...